Effect of thickness and frequency of applied field on the switching dynamics of multiferroic bismuth ferrite thin films

Joshi, Chhatra R.; Acharya, Mahendra; Mankey, G. J.; Gupta, Arunava

doi:10.1103/physrevmaterials.6.054409

Cited by 7 publications

(3 citation statements)

References 47 publications

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“…The films were deposited on (001)-oriented single-crystal SrTiO 3 (STO) substrates (purchased from CrysTec GmbH) and SrRuO 3 (SRO)-buffered SrTiO 3 . The 50 nm SrRuO 3 conducting layer was separately grown using pulsed laser deposition (PLD) with a 248 nm KrF excimer laser to serve as a bottom electrode for the electrical measurements; the deposition process is described elsewhere …”

Section: Methodsmentioning

confidence: 99%

“…The 50 nm SrRuO 3 conducting layer was separately grown using pulsed laser deposition (PLD) with a 248 nm KrF excimer laser to serve as a bottom electrode for the electrical measurements; the deposition process is described elsewhere. 60 Crystal structure analysis of the films was carried out using a Philips X'pert Pro X-ray diffraction (XRD) system. The XRD system used a Cu Kα source (λ = 1.5418 Å) equipped with a Ni Kβ filter.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…If an FE material has high leakage current due to low bandgap or defects, acquiring a suitable polarization-voltage hysteresis loop with a standard FE tester in metal–insulator–metal (MIM) capacitive geometry becomes difficult for films below ∼100 nm thickness. In thin-film regime below 100 nm, use of PFM becomes crucial to explore the FE properties …”

Section: Introductionmentioning

confidence: 99%

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Growth of Samarium-Substituted Epitaxial Bismuth Ferrite Films by Chemical Vapor Deposition

Acharya

Joshi

Gupta

2023

Crystal Growth & Design

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There is great interest in BiFeO 3 and various substituted heterostructures for ferroelectric random-access memory (RAM) and energy-efficient magnetoelectric logic and memory devices. High-quality heterostructures of these material systems with smooth topography are desirable to incorporate into functional devices. For this purpose, the direct liquid injection chemical vapor deposition (DLI-CVD) technique has been employed to grow BiFeO 3 and Bi-site samarium-substituted epitaxial films on (001)-oriented SrTiO 3 and SrRuO 3 -buffered SrTiO 3 substrates. Structural and morphological characterizations of the films are carried out using X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. The films show textured growth and exhibit smooth morphology with root mean square roughness below 2.5 nm. Ferroelectric characteristics and memory retention in thin films are demonstrated using piezoresponse force microscopy. The thickness scaling of the switching voltage has been analyzed to validate the Kay−Dunn law for Sm-substituted BiFeO 3 and compared with that of pure BiFeO 3 .

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Section: Methodsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of Samarium-Substituted Epitaxial Bismuth Ferrite Films by Chemical Vapor Deposition

Acharya

Joshi

Gupta

2023

Crystal Growth & Design

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Spray pyrolysis synthesis, electrical and magnetic properties of HoxBi1-xFeO3 nanocrystals

Томина

Kurkin²,

Korol’³

et al. 2022

J Mater Sci: Mater Electron

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Effects of Non-Stoichiometry and Strain on Ferroelectric Properties of CVD-Grown Bismuth Ferrite Films

Acharya,

Joshi,

Plombon

et al. 2024

Chem. Mater.

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Bismuth ferrite (BiFeO3, BFO) is a promising room-temperature multiferroic material but growing high-quality BFO thin films using chemical vapor deposition (CVD) has been challenging due to the limited availability of suitable precursors and the volatility of bismuth. In this study, we successfully grew high-quality BFO thin films using direct liquid injection CVD (DLI-CVD) with a solution mixture of iron acetylacetonate and triphenyl bismuth precursors dissolved in N,N-dimethylformamide. The films were deposited on SrTiO3(001), DyScO3(110), and SrTiO3/Si(001) substrates at 600 °C. The Bi/Fe ratio in the films was precisely controlled by adjusting the molar ratio of the precursors and strategically positioning substrates at optimal locations within the deposition chamber. Additionally, the film strain state is established by lattice mismatch with the substrate and controlling the growth mode. We investigated the effects of nonstoichiometry, substrate-induced strain, and crystalline mosaicity on the structural and ferroelectric properties of BFO films. Additionally, we present the results of magnetic measurements for stoichiometric and iron-rich films. Our findings demonstrate the potential of DLI-CVD for growing high-quality BFO films with superior electrical and magnetic properties.

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Effect of thickness and frequency of applied field on the switching dynamics of multiferroic bismuth ferrite thin films

Cited by 7 publications

References 47 publications

Growth of Samarium-Substituted Epitaxial Bismuth Ferrite Films by Chemical Vapor Deposition

Growth of Samarium-Substituted Epitaxial Bismuth Ferrite Films by Chemical Vapor Deposition

Spray pyrolysis synthesis, electrical and magnetic properties of HoxBi1-xFeO3 nanocrystals

Effects of Non-Stoichiometry and Strain on Ferroelectric Properties of CVD-Grown Bismuth Ferrite Films

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