Bismuth ferrite (BiFeO3, BFO) is a promising
room-temperature
multiferroic material but growing high-quality BFO thin films using
chemical vapor deposition (CVD) has been challenging due to the limited
availability of suitable precursors and the volatility of bismuth.
In this study, we successfully grew high-quality BFO thin films using
direct liquid injection CVD (DLI-CVD) with a solution mixture of iron
acetylacetonate and triphenyl bismuth precursors dissolved in N,N-dimethylformamide. The films were deposited
on SrTiO3(001), DyScO3(110), and SrTiO3/Si(001) substrates at 600 °C. The Bi/Fe ratio in the films
was precisely controlled by adjusting the molar ratio of the precursors
and strategically positioning substrates at optimal locations within
the deposition chamber. Additionally, the film strain state is established
by lattice mismatch with the substrate and controlling the growth
mode. We investigated the effects of nonstoichiometry, substrate-induced
strain, and crystalline mosaicity on the structural and ferroelectric
properties of BFO films. Additionally, we present the results of magnetic
measurements for stoichiometric and iron-rich films. Our findings
demonstrate the potential of DLI-CVD for growing high-quality BFO
films with superior electrical and magnetic properties.