Effect of thickness on the structure, morphology and optical properties of sputter deposited Nb 2 O 5 films

Lai, Fachun; Lin, Limei; Huang, Zhigao; Gai, Rongquan; Qu, Yan

doi:10.1016/j.apsusc.2006.03.014

Cited by 67 publications

(36 citation statements)

References 19 publications

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“…At the same wavelength, the k of the films changes from 1.05 9 10 -3 for the thickest film to 0.75 9 10 -3 for the thinnest film as shown in Table 1. The increase of the film t for crystalline film will increase the optical scattering and optical loss [29], which induces the increase of k.…”

Section: Optical Propertiesmentioning

confidence: 99%

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Göktaş

Aslan

Yasar

et al. 2011

J Mater Sci: Mater Electron

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Zinc sulfide (ZnS) thin films of different thickness were coated on glass substrates by the sol-gel dip-coating technique. Thickness dependent structural and optical properties of the films were studied in detail. X-ray diffraction (XRD) analysis indicated that the films had mixture of cubic (b) and hexagonal (a) phases with cubic (b) phase being predominant. Scanning electron microscope (SEM) showed that the film surfaces were smooth and crack free. Energy dispersive X-ray (EDX) measurement showed no impurity in the ZnS compound with elemental concentration of Zn/S being 50.38/49.62. Optical measurements showed that optical transmittance of the films were decreased in the visible range as the film thickness increased and band gap of the thin films were estimated to be about 3.61, 3.56, and 3.39 eV for the films with thickness of 100, 220, and 360 nm, respectively. Reactive indices and extinction coefficients of the films were measured by Spectroscopic Ellipsometer. Both the refractive index (n) and extinction coefficient (k) of the films were increased as the film thickness decreased. Electrical measurements showed that the resistivity of the films were decreased as the substrate temperature and film thickness increased.

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Section: Optical Propertiesmentioning

confidence: 99%

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Göktaş

Aslan

Yasar

et al. 2011

J Mater Sci: Mater Electron

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“…The temperature of the film increases in the heating process, which will enhance the mobility of molecules or ions in the film. The movement of molecules or ions may induce the crystallization and the variation of surface morphology of the film [19]. The crystallite size and surface roughness are shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of porous silicon photoluminescence using vanadium pentoxide (V₂O₅) treatment

Derbali

Ezzaouia

2012

EPJ Web of Conferences

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Abstract:A new method has been developed to improve the photoluminescence intensity of porous Silicon PS. In this treatment we used vanadium, for the first time, to passivate porous silicon. Thermal evaporation of ( onto PS layer, followed by a thermal treatment at 100 °C, 200°C, 300°C and 400°C for 15 min under oxygen flow, can increase the intensity of the photoluminescence of PS. Vanadium oxide covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Changes in the surface morphology induced by thermal treatment were investigated by atomic force microscope (AFM) showing an increase of the nanoparticles dimensions compared to the initial dimensions of the PS nanostructure. The reflection spectra of PS, before and after treatment with ( , performed in the 300-1200 nm wavelength range and compared to a virgin mc-Si wafer, showed an important decrease of the reflectivity by this new treatment.

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“…Particularly, the high index of refraction, which is related to a high dielectric permittivity, and the wide band gap, which is related to a low dielectric loss, favor the niobium pentoxide for use as a dielectric material for capacitor technology and for the use as a transparent material in optical systems [4]. The niobium pentoxide has been extensively studied as a gate dielectric for complementary metal oxide semiconductor (CMOS) devices [5] and is in particular a very interesting candidate for nonvolatile memories based on resistive switching [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Thermally activated crystallization of Nb2O5 grown on Pt electrode

et al. 2012

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The influence of the local crystallographic orientation of the polycrystalline bottom platinum electrode on the crystallization of niobium pentoxide thin films during their rapid thermal annealing was investigated by X-ray diffraction, X-ray reflectivity and transmission electron microscopy. The Nb 2 O 5 thin films under study were reactively sputtered in a mixed O 2 /Ar atmosphere and subsequently subjected to the annealing in argon atmosphere at temperatures ranging from 500 • C to 700 • C. The X-ray diffraction confirmed a transition from the amorphous niobium oxide to the crystalline orthorhombic Nb 2 O 5 for temperatures between 500 • C and 600 • C. The X-ray reflectivity measurements showed that the crystallization process was accompanied by a continuous increase of the electron density in Nb 2 O 5 and by a rapid increase of the surface roughness at 700 • C. It was further observed by transmission electron microscopy that Nb 2 O 5 crystallizes selectively and that the

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Effect of thickness on the structure, morphology and optical properties of sputter deposited Nb 2 O 5 films

Cited by 67 publications

References 19 publications

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Enhancement of porous silicon photoluminescence using vanadium pentoxide (V₂O₅) treatment

Thermally activated crystallization of Nb2O5 grown on Pt electrode

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Effect of thickness on the structure, morphology and optical properties of sputter deposited Nb 2 O 5 films

Cited by 67 publications

References 19 publications

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

Enhancement of porous silicon photoluminescence using vanadium pentoxide (V2O5) treatment

Thermally activated crystallization of Nb2O5 grown on Pt electrode

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Product

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Enhancement of porous silicon photoluminescence using vanadium pentoxide (V₂O₅) treatment