Effect of tin concentrations on properties of indium tin oxide films deposited on PET substrate under various conditions

Effects of Doping Ratio and Thickness of Indium Tin Oxide Thin Films Prepared by Magnetron Sputtering at Room Temperature

“…More fine characterization tools should be employed in the future to unveil this interesting phenomenon. Different from Bae et al [10] and Dekkers et al [21], these results were basically consistent with Kang et al's report [14]. It seemed that the Sn dopant was not entirely detrimental to the electron conducting when ITO films were amorphous.…”

“…% doping ratio were less than the value listed in Table 2. The main difference in this paper is that deliberately substrate heating or low-temperature annealing (<100 • C) was carried out or extra gas species were fed in the sputtering chamber compared with other researchers [14,15].…”

“…These experimental results were distinct from other researchers' results [8,9] and reproduced well. atings 2023, 13, x FOR PEER REVIEW 6 low-temperature annealing (<100 °C) was carried out or extra gas species were fed in sputtering chamber compared with other researchers [14,15]. According to the electrical resistivity formula ρ = 1/qμne, i.e., the resistivity ρ determined by carrier charge q, mobility μ, and carrier concentration ne.…”

“…By the density functional theory calculation, Tripathi found that [13] the visible transmission would decrease greatly down to 60% when the tin doping ratio was higher than 6%. Kang showed that [14] the lowest resistivity and relatively small stress level was obtained for the film deposited from an ITO target doped with 7 wt. % SnO 2 .…”