Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device

Gupta, C. P.; Jain, Prerna; Chand, Umesh; Sharma, Shashikant; Birla, Shilpi; Sancheti, S.

doi:10.21272/jnep.12(1).01007

Cited by 4 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this review, we will present RRAM-related inorganic materials with oxides, solid electrolyte and two-dimensional (2D) materials. [9,20,75], NiO [8,12,76], TiO 2 [21,77,78], HfO 2 [60,79,80], ZnO [81][82][83], and ZrO 2 [22,84,85] are always playing main roles in materials application of RS medium. The first report of RS performance in binary metal oxides was proposed by Hickmott in 1962 [91], which demonstrated the RS characteristics of Al/Al 2 O 3 /Al device under the effect of an electric field.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…As one of the most typical representatives of oxides, binary oxides have been explored for over half a century due to their simple composition, low manufacture cost, compatibility with traditional CMOS (complementary metal-oxide-semiconductor transistor) technology, and ease of fabrication and control. Among binary oxides, binary metal oxides such as Al 2 O 3 [ 9 , 20 , 75 ], NiO [ 8 , 12 , 76 ], TiO 2 [ 21 , 77 , 78 ], HfO 2 [ 60 , 79 , 80 ], ZnO [ 81 , 82 , 83 ], and ZrO 2 [ 22 , 84 , 85 ] are always playing main roles in materials application of RS medium.…”

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

show abstract

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

show abstract

“…2. SIMNRA is mainly intended for the simulation of spectra with non-Rutherford backscattering cross-sections The SIMNRA simulation [15][16][17][18][19] is used to fit the spectrum and to determine the thickness of the film and zinc, oxygen atomic fraction. From the SIMNRA simulation, the zinc atomic fractions were estimated to be 60.0% and oxygen 40.0 % and Zinc oxide film thickness of 140 ± 10 nm.…”

Section: Resultsmentioning

confidence: 99%

“…As grown substrate was characterized for the surface characterization properties showing uniform and crack-free deposition of ZnO. 15,16 Gold 200 Å thick was placed by DC sputtering using a shadow mask. Before gold is deposited, a coating of titanium (15 nm) is deposited to make the gold more adherent to the annealed oxide layer.…”

Section: Methodsmentioning

confidence: 99%

Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications

Kaushik¹,

Pandey²,

Singhal³

2022

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

This study looks at the results of resistive random-access memory (ReRAM) devices made by using structural layers of Gold (Au)/Zinc oxide (ZnO)/Indium tin oxide (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, the resistance ratio was found to be 102 at 1V. The device's switching properties improved after annealing. Rutherford backscattering spectrometry determined the thickness of the deposited zinc oxide layer to be approximately 140±10 nm. The zinc atomic fractions were calculated to be 60% and oxygen 40% by the SIMNRA simulation. The ZnO-based structures were also characterized and analyzed using X-ray powder diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The current study reveals that annealing improves the performance of ReRAM devices.

show abstract

Bionic Sypantic Application of OxRRAM Devices

Shen

Zhao

Yang

et al. 2020

2020 International SoC Design Conference (ISOCC)

View full text Add to dashboard Cite

Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device

Cited by 4 publications

References 0 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications

Bionic Sypantic Application of OxRRAM Devices

Contact Info

Product

Resources

About