Effect of Transition Metal Dopant on the Optoelectronics Properties of Zinc Oxide Thin Film

Basri, S. H.; Za'aba, N. K.; Sarjidan, Mohd Arif Mohd; Majid, W.H. Abd.

doi:10.1166/jno.2013.1502

Cited by 2 publications

(1 citation statement)

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“…From Figs. 1 and 2, It is observed that the conductivity of the samples increases when ZnO-TiO 2 was doped with the metal oxides at RT while decreases when the films were annealed to 573 K. This increase in conductivity with adding metal oxides is due to the increase the number of charge carriers (electrons or holes) from donors (Cu, Fe) and acceptors Mn ions incorporated in the interstitial or substitutional sites of Zn 2+cations [18]. Also, these figures show that all films have two activation energies E a1 and E a2 .…”

Section: σ = σ O Exp (−E a /K B T)mentioning

confidence: 97%

Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique

Karim

Mohammed

2021

IJP

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In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the electrical properties of the films were described. It was observed through Hall Effect measurements that the films loaded vectors of the shape N and the type P.

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Section: σ = σ O Exp (−E a /K B T)mentioning

confidence: 97%