Effect of V-pits size on the reliability of InGaN/GaN light emitting diodes

Zhu, Tao; Cheng, Liwen; Zeng, Xianghua

doi:10.1016/j.spmi.2021.106990

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…V-pits are usually considered a desirable defect for large nitride LEDs . First, they do not affect the EQE because of the potential barrier between the active region and the dislocation.…”

Section: Resultsmentioning

confidence: 99%

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Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy

Sáenz de Santa María Modroño,

Le Maoult,

Bernier

et al. 2024

ACS Photonics

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The emission properties of InGaN/GaN μ-light-emitting diodes (LEDs) of different sizes and shapes were investigated by spectrally resolved and time-correlated cathodoluminescence spectroscopy. This approach provides high spatial and temporal resolution, allowing us to simultaneously measure CL spectra and carrier lifetimes at the single μ-LED level. It also enables us to investigate the correlation between these parameters within individual μ-LEDs and across multiple devices. Our observations show a large variation in CL intensity between similarly sized μ-LEDs, particularly in the smallest samples. This variation correlates with changes in the emission wavelength and has been attributed to differences in injection efficiency between samples caused by V-pit type defects in the active region.

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“…V-pits are usually considered a desirable defect for large nitride LEDs . First, they do not affect the EQE because of the potential barrier between the active region and the dislocation.…”

Section: Resultsmentioning

confidence: 99%

“…V-pits are usually considered a desirable defect for large nitride LEDs. 31 First, they do not affect the EQE because of the potential barrier between the active region and the dislocation. Second, they can even improve the wall plug efficiency by lowering the forward voltage in InGaN/GaN LEDs due to lateral hole injection.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy

Sáenz de Santa María Modroño,

Le Maoult,

Bernier

et al. 2024

ACS Photonics

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“…The LED structure includes GaN buffer layer (3 μm) and 2 μm n-type GaN layers with a concentration of N d = 3×10 19 cm −3 , three pairs of 50 nm InGaN (2 nm)/GaN (48 nm) superlattice, then five pairs of InGaN (2 nm)/GaN (10 nm) MQW1, ten pairs of InGaN (3.5 nm)/GaN (10.5 nm) MQW2 followed by 50 nm p-type GaN with N a = 1×10 20 cm −3 , 100 nm AlGaN electron barrier layer (EBL), finally 50 nm p-type GaN capping layer with N a = 5×10 19 cm −3 . In epitaxial growth, we have adopted approaches of the pattern sapphire substrate (PSS) and the V-pits technique [18] to improve LED's performance. Afterword, using a standard LED chip technique, we obtained dies with a size of 425×875 μm 2 .…”

Section: Methodsmentioning

confidence: 99%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

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The paper reports on the degradation of InGaN/GaN Blue LED submitted to proton irradiation at 80 MeV and various fluences (4×1013 p/cm2 and 1×1014 p/cm2). After irradiation, we found a decrease in light output power and the external quantum efficiency with fluence. Photoluminescence (PL) measurements exhibited that the peak position at 400, 447 and 568 nm remained unchanged, only the peak intensity decreased. The intensity of the blue emission reduced by 75%, indicating that the active region degraded seriously; the intensity from InxGa1-xN (x=0.11) reduced more than two times in comparison with the blue emission, implying that proton irradiation affected InxGa1-xN more seriously than InGaN/GaN MQWs. The degradation of LED is ascribed to the increase in the defect-related Shockley–Read–Hall recombination after 80 MeV proton irradiation with higher fluence.

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“…As strain energy builds up in the system, V-pits form at threading dislocations (originated from the underlying GaN heteroepitaxy) as well as at stacking mismatch boundaries, forming six {10-11} planes with an open face in the basal plane [13]. V-pits, when limited to the active region only, can have favorable impacts on the device, itself [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Routh¹,

Abdelhamid²,

Colter³

et al. 2022

Semicond. Sci. Technol.

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Highly relaxed InGaN templates with an effective In-content of ~ 10% that exhibit reduced V-pit density and an improved surface roughness are reported using the semibulk (SB) growth approach. This was achieved by the insertion of 5-period high temperature InGaN semibulk (HTSB) regions. This report demonstrates that better quality InGaN templates can be achieved by the insertion of HTSB within the templates, rather than by ending the templates with a superlattice structure (SLS) or by refilling the pits with GaN interlayers. Three SB samples were grown with and without the HTSB layers. Using secondary-ion mass spectrometry, photoluminescence, and x-ray diffraction, the effective In-content of the templates was determined to be 9.6%, 5.8%, and 8.7%. Using atomic force microscopy, the surface roughness was found to improve from 4.4 nm to 1.7 nm by using the two HTSB regions, and the average V-pit density and depth improved from 7.6×10-7 cm-2 to 4.5×10-7 cm-2 and 8.2 nm to 2.8 nm, respectively. Also, the maximum V-pit depth was reduced from about 30.5 nm to about 9.6 nm in the sample with the HTSB regions. Two LEDs were studied, one with both HTSB regions, and one with only the topmost HTSB. The optical power density of the LED with both HTSB regions was 1.4 times higher at the peak injection current, displayed a ~1.3 times higher external quantum efficiency peak, and a delay of the EQE droop onset. These results show that higher In-content SB templates can be improved with the implementation of a modified growth approach.

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Effect of V-pits size on the reliability of InGaN/GaN light emitting diodes

Cited by 7 publications

References 23 publications

Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy

Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

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