Effect of valence band splitting on the biexciton binding energy in wurtzite‐type semiconductors

Abstract

A lower bound for the biexcit.on binding energy in wurtzite-type semiconductors is calculated using a G4 X 64 matrix Hamiltonian obtained by the k -p method which takes into account the interband coupling-induced nonparabolicity of the two upper valence bands A and B as well as t,lieir different anisotropies and symmetries.