Aluminum-doped zinc
oxide (AZO) is a popular, low-cost, nontoxic
material that finds application as a transparent conducting electrode
in photonic, sensing, and photovoltaic devices. We report the AZO
thin films with a high figure of merit on large-area glass substrates
by direct current magnetron sputtering without any intentional substrate
heating. Furthermore, a simple thermal post-treatment to improve the
transmittance of AZO thin film in the infrared region for its application
in low-band-gap devices is presented. High optoelectronic properties
are obtained by optimizing oxygen content during the sputtering process.
The structural, morphological, optoelectrical, and photoluminescence
characterization of cold sputtered AZO films is investigated for its
latent applications. AZO thin films with an electrical sheet resistance
of 8.8 Ω/□ and a visible light transmittance of 78.5%
with thickness uniformity above 95% are achieved on 300 mm ×
300 mm glass substrate. The AZO film with optimized process conditions
is employed as a transparent electrode to fabricate a copper–indium–gallium–selenide-based
thin film solar cell, demonstrating 11.8% power conversion efficiency.
The AZO film with optimized sputter conditions was post-treated in
ambient conditions with an Al blanket to suppress the resistivity
by proper organization of the defects due to Al
3+
consumption
and point defects, resulting in improved transparency (85%) in the
infrared region with a sheet resistance of 40 Ω/□. This
has great potential for developing scalable and low-cost AZO thin
films for transparent electrodes in a wide range of the spectrum.