2008
DOI: 10.1016/j.orgel.2008.05.004
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Effect of water in ambient air on hysteresis in pentacene field-effect transistors containing gate dielectrics coated with polymers with different functional groups

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Cited by 86 publications
(41 citation statements)
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“…[15][16][17][18] Further, water molecules in the air could create hysteresis-causing charge traps at the semiconductor/dielectric interface. [19][20][21][22] According to our previous report, 22 water adsorption into the interface between the pentacene and the polymer gate dielectric was driven by the polarity of the polymer surface, which resulted in the trap formation being able to cause hysteresis. The observed hysteresis could be explained in terms of hole and electron trap formations in accordance with the functional groups at the polymer surface.…”
Section: Introductionmentioning
confidence: 99%
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“…[15][16][17][18] Further, water molecules in the air could create hysteresis-causing charge traps at the semiconductor/dielectric interface. [19][20][21][22] According to our previous report, 22 water adsorption into the interface between the pentacene and the polymer gate dielectric was driven by the polarity of the polymer surface, which resulted in the trap formation being able to cause hysteresis. The observed hysteresis could be explained in terms of hole and electron trap formations in accordance with the functional groups at the polymer surface.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] Gu et al 15,16 found that in the case of pentacene-based OFETs containing octadecyltrichlorosilanemodified SiO 2 gate dielectrics, the hysteresis observed during the full swing of a gate is due to long-lived charge traps present at the interface between semiconductor and gate dielectric, where trapping and detrapping of holes and electrons take place under an applied gate bias. [15][16][17][18] Further, water molecules in the air could create hysteresis-causing charge traps at the semiconductor/dielectric interface.…”
Section: Introductionmentioning
confidence: 99%
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“…It is well known that silanol groups on the surface of SiO 2 can act as traps causing hysteresis [4,16]. It is also suggested in the literature that oxygen and water molecules from ambient can diffuse through the film to the dielectric/semiconductor interface and cause hysteresis [11,12]. An earlier report on the effect of post-deposition annealing on pentacene based transistors showed improvement in stability after annealing [2] where the devices were covered with an encapsulation layer in inert atmosphere before exposure to atmosphere, thereby preventing water molecules and oxygen from diffusing into the film.…”
Section: Ofet Characteristicsmentioning
confidence: 99%
“…We have concluded in that study that hole trapping is mainly decided by grain boundary density, while electron trapping predominantly occurs at dielectric/semiconductor interface though it can partly occur at the grain boundaries also. It is well discussed in the literature that oxygen or moisture from ambient diffusing into the interface aggravates charge trapping [11,12]. Since the present study is carried out in air and there is change in morphology and grain boundary density with annealing, apart from studying threshold voltage instability, it is also essential to determine how hole and electron traps get influenced by the above mentioned factors after annealing.…”
Section: Introductionmentioning
confidence: 99%