Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

Kim, J.S.; Marzouk, H. A.; Reucroft, P. J.; Robertson, J. D.; Hamrin, Charles E.

doi:10.1016/0040-6090(93)90509-n

Cited by 38 publications

(10 citation statements)

References 14 publications

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“…21,22 Commercially available gallium and aluminium precursors, for example [Al(acac) 3 ] and [Ga(acac) 3 ] 23 (acac = acetylacetonate), have been investigated and films grown with and without oxygen showed high carbon contamination. [24][25][26] Recent work has highlighted the use of b-ketoiminate ligands as opposed to alkoxides -the added functionality of groups attached to the nitrogen atom enabling fine tuning of the precursor properties. 5 Group 13 b-ketoiminate complexes can act as single-source precursors, still containing a direct metal-oxygen bond within a delocalised ring including O and N donor atoms.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

et al. 2015

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“…The formation of boehmite nanocrystals is presumably caused by the presence of water, which is released during the aldol condensation of acetophenone at high temperature 23. The existence of water in the system accelerates the hydrolysis of aluminum acetylacetonate,28 and thus leads to the formation of aluminum oxyhydroxide instead of aluminum oxide.…”

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confidence: 99%

Low‐Temperature Synthesis of γ‐Alumina Nanocrystals from Aluminum Acetylacetonate in Nonaqueous Media

Zhou

Antonietti

Niederberger

2007

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Cooler without water: γ‐Alumina has been synthesized at 200 °C in benzylamine and at 160 °C in dimethyl sulfoxide using aluminum acetylacetonate as the precursor, the lowest temperature that such materials have been prepared. In contrast to aqueous sol–gel process with aluminum oxide precursors, where aluminum (oxy)hydroxides are first formed and subsequent calcination is required, the use of anhydrous organic solvents directly yields γ‐alumina nanocrystals without further calcination (see TEM image).

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“…The CVD experiment setup used in this study has been described previously [10][11][12]. This thermal CVD setup has been used to deposit pure copper metal on a variety of substrates including Kapton (polyimide), glass and Si(100) using C u ( a c a c ) 2 and Cu[(HFA)2] as precursors.…”

Section: Methodsmentioning

confidence: 99%

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

et al. 1994

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Abstract. Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)2] and copper HexaFluoroAcetylacetonate [Cu(HFA)2] sources. A thermal, cold-wall, reduced pressure (3325-5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H20 vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 gf~ cm for copper films deposited on Si(100) and 3.44 gf~ cm for copper films deposited on glass at substrate temperatures of 265 ° C and a [Cu(acac)2] source temperature of 147 ° C with the use of HzO vapor were measured. When [Cu(HFA)2] was used, the substrate temperature was 385 ° C and the source temperature was 85 ° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)2] source. A deposition rate of 11 nm/min was obtained with Cu(acac)2 as the source and the rate was 44.4 nm/min with the Cu(HFA)2 source; both were obtained with the use of H20 vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS. 81.15, 68.55, 07.80 As Integrated Circuits (ICs) become more densely packed, aluminum and its alloys are less attractive for use as interconnect lines and multilevel metallization. These alloys have drawbacks such as hillock formation and electromigration failures under the high current densities typically employed in high speed circuitry [1]. Copper has been considered as a promising alternative to aluminum and its alloys. Copper has many attractive properties such as low resistivity, high electromigration resistance and high stress migration resistance. For microelectron-* To whom all correspondence should be addressed. PACS:

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Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

Cited by 38 publications

References 14 publications

Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

Low‐Temperature Synthesis of γ‐Alumina Nanocrystals from Aluminum Acetylacetonate in Nonaqueous Media

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

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