Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers

Kumar, Arkadeep; Kaminski, Steffi; Melkote, Shreyes N.; Arcona, Chris

doi:10.1016/j.wear.2016.07.009

Cited by 88 publications

(25 citation statements)

References 34 publications

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“…Recent industry trends indicate a shift from loose abrasive slurry (LAS) to fixed abrasive diamond wire sawing (DWS) . The slicing action in LAS consists of a three‐body abrasion mechanism in contrast to two‐body abrasion in DWS, which cuts silicon by a combination of ductile cutting and brittle fracture . Consequently, scribing can be used to understand the fundamentals of DWS.…”

Section: Introductionmentioning

confidence: 99%

“…A number of studies have reported the ductile cutting of silicon . The ductile behavior of silicon is attributed to stress‐induced phase transformation caused by the large compressive stresses generated in front of the scriber . Ductile removal of silicon during DWS could produce less micro‐cracks, thereby enhancing the fracture strength of the wafer.…”

Section: Introductionmentioning

confidence: 99%

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Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

et al. 2017

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Fundamental understanding of the fixed abrasive slicing of photovoltaic silicon wafers is crucial for producing low-cost wafers with superior surface quality and mechanical strength. With the goal of understanding the diamond wire sawing process, this paper investigates the scribing of mono-and multi-crystalline silicon by the abrasive grits on an actual diamond wire. Specifically, the effects of grit shape and silicon crystal structure on the resulting surface morphology, subsurface damage, and the critical depth of cut at which ductile-to-brittle transition occurs are investigated. Results show that surface cracking depends on the grit shape. Scribing across the grain and twin boundaries in multi-crystalline silicon impacts the resulting surface morphology, with grit shape producing a greater effect than crystallographic orientation in the grain interior relative to the grain boundary. Subsurface damage depends on the grit shape and crystal structure. Differences in the critical depth of cut for ductile-to-brittle transition in scribing of mono-crystalline silicon are explained via analysis of the stress state produced by idealized grit shapes. K E Y W O R D Sabrasive shape, damage, diamond wire sawing, multi-crystalline silicon, scribing

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

et al. 2017

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“…Recently, diamond wire sawing technique on multicrystalline silicon wafer grew up at a very high speed due to costeffectiveness compared to traditional slurry sawing process [1,2]. It was demonstrated that diamond wire sawing (DWS) has several superiorities over multiwire slurry sawing (MWSS), that is, higher slicing speed, less saw damage layer, better environmental friendship, and potential for cutting thinner wafers [3,4]. However, diamond wire sawing brings a big texturing problem due to the surface with less saw damage layer and less start point for normal acid texturing [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Surface Structure on Electrical Performance of Industrial Diamond Wire Sawing Multicrystalline Si Solar Cells

Wang

Gou

Zhou

et al. 2018

International Journal of Photoenergy

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We report industrial fabrication of different kinds of nanostructured multicrystalline silicon solar cells via normal acid texturing, reactive ion etching (RIE), and metal-assisted chemical etching (MACE) processes on diamond wire sawing wafer. The effect of different surface structure on reflectivity, lifetime, and electrical performance was systematically studied in this paper. The difference between industrial acid, RIE, and MACE textured multicrystalline silicon solar cells to our knowledge has not been investigated previously. The resulting efficiency indicates that low reflectivity surface structure with the size of 0.2–0.8 μm via RIE and MACE process do not always lead to low lifetime compared with acid texturing process. Both RIE and MACE process is promising candidate for high efficiency processes for future industrial diamond wire sawing multicrystalline silicon solar cells.

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“…3,4 The wafering process involves interaction of abrasive grits with the silicon material. [5][6][7] Depending on the condition of abrasives, the surfaces of these wafers frequently exhibit a mixture of ductile and brittle surface characteristics. [8][9][10][11] The abrasives plastically deform the surface of silicon which are constrained within a surrounding elastic region, thus giving rise to residual stresses.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7] Depending on the condition of abrasives, the surfaces of these wafers frequently exhibit a mixture of ductile and brittle surface characteristics. [8][9][10][11] The abrasives plastically deform the surface of silicon which are constrained within a surrounding elastic region, thus giving rise to residual stresses. 12 Evaluation of these residual stresses is critical to accurate understanding of the mechanical integrity of these wafers, which may undergo further processing into solar cells and microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

Skenes

Kumar

Prasath

et al. 2017

Journal of Elec Materi

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Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear.

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Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers

Cited by 88 publications

References 34 publications

Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

Effect of Surface Structure on Electrical Performance of Industrial Diamond Wire Sawing Multicrystalline Si Solar Cells

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

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