Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Abstract

The effect of Y 2 O 3 additive on the nitridation of diamond wire silicon cutting waste (DWSCW) was studied by using X-ray diffraction, thermo gravimetry, differential thermal analysis, scanning electron microscope equipped with energy-dispersive spectrometry, and an equivalent alternative method, and the individual particles of DWSCW were simulated using cubic polycrystalline silicon blocks. The results showed that the native SiO 2 film on the surface of DWSCW can be disrupted at low temperature (1300 • C) by adding Y 2 O 3 additive, which provide good channels for the diffusion of SiO and N 2 and improve the overall conversion of DWSCW. Y 2 O 3 additive can also reduce the initial nitriding temperature of cutting waste, change the nitriding kinetic behavior, and promote the formation of β-Si 3 N 4 through accelerating the nitridation of cutting waste at high temperature (≥1500 • C). In addition, when 8 wt% Y 2 O 3 additive is added to the cutting waste, the complete nitridation is achieved, at 1350 • C, and ω α + ω β reaches a maximum of 83.6 wt%.