Effect of Zn–Cd interdiffusion on the band structure and spontaneous emission of ZnO/Zn1−Cd O/ZnO quantum wells

Shtepliuk, Ivan; Khranovskyy, Volodymyr; Yakimova, Rositsa

doi:10.1016/j.spmi.2015.06.013

Cited by 7 publications

(4 citation statements)

References 30 publications

(26 reference statements)

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“…ZnO is a wideband gap material with a band gap of 3.3 eV. Low dimensional structures of ZnO, together with its several alloys, such as ZnCdO, ZnMgO, and ZnBeO, have been studied (Ryu et al, 2006;Sadofev et al, 2007;Lange et al, 2011;Park et al, 2014;Pearton and Ren, 2014;Shtepliuk et al, 2015;Zhao et al, 2015;Orphal et al, 2017;Zúñiga-Pérez, 2017;Özgür et al, 2018;Liu et al, 2019;Sirkeli and Hartnagel, 2019;Yildirim, 2019;Pietrzyk et al, 2020;Park, 2020;Hong and Park, 2021;Meng et al, 2021;Yıldırım, 2021;Zhang, et al, 2022). It has been shown that ZnCdO/ZnO quantum wells are capable of emitting in the visible spectral range (Sadofev et al, 2007;Lange et al, 2011;Zúñiga-Pérez, 2017;Pietrzyk et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Intersubband Transitions in Nonpolar ZnO/BeMgZnO Quantum Wells: Effects of Physical Dimension, Concentration and Donor Level

Yıldırım

Cakir

2022

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Polarizaton properties of ZnO well layers on BeMgZnO barrier layers grown in polar and semipolar orientations have been investigated. Cases of relaxed and strained barrier layers are considered. It is found that the polarizaton difference at the interfaces leads to a built-in electric field inside the well layer as much as 8 MV cm^(-1) in magnitude. Nonpolar ZnO/BeMgZnO quantum wells have been studied in terms of intersubband transitions. The calculations have covered Be and Mg concentrations up 0.18 and 0.5, respectively. It has been found that intersubband transition (ISBT) energies ranging from 50 to 700 meV are possible. The effect of barrier thickness on the ISBT energies has been studied. The results indicate insignificant changes in ISBT energies compared to the energies.

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Section: Introductionmentioning

confidence: 99%

Intersubband Transitions in Nonpolar ZnO/BeMgZnO Quantum Wells: Effects of Physical Dimension, Concentration and Donor Level

Yıldırım

Cakir

2022

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…Numerous existing theoretical and experimental studies were mainly triggered by its unique optical properties, especially large exciton binding energy (60 meV) at room temperature (RT), which is even higher than that of GaN. This makes ZnO an excellent candidate for the next-generation ZnO-based quantum well light-emitting devices [ 9 , 10 , 11 , 12 , 13 ]. Naturally, the ultimate development of ZnO-based technologies requires the production of device-quality ZnO layers with tunable band gap energy, controllable doping level, low defect density, minimized strain, and high optical performance (good transparency and strong light emission).…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

et al. 2021

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The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

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“…Zn 1-x Cd x O ternary alloy, composed of zinc and cadmium oxides, at present is a much studied semiconductor system in optoelectronics [1][2][3][4][5][6][7][8]. It possesses many similar properties to the commercialized In x Ga 1-x N solid solution [9][10][11][12] and can have a huge potential for light-emission diodes (LED) applications [13].…”

Section: Introductionmentioning

confidence: 99%

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

2016

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Effect of Zn–Cd interdiffusion on the band structure and spontaneous emission of ZnO/Zn1−Cd O/ZnO quantum wells

Cited by 7 publications

References 30 publications

Intersubband Transitions in Nonpolar ZnO/BeMgZnO Quantum Wells: Effects of Physical Dimension, Concentration and Donor Level

Intersubband Transitions in Nonpolar ZnO/BeMgZnO Quantum Wells: Effects of Physical Dimension, Concentration and Donor Level

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

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