Effect of Zr4+ substitution on ferroelectric and dielectric properties of BaTiO3 ceramics

Improvement of ferroelectric properties via Zr doping in barium titanate nanoparticles

“…Table 8 compares our results with those reported earlier. We noticed that our samples are the largest in the transition temperature when compared with the results obtained by other authors [3,[67][68][69][70][71] in the parent sample and samples with x = 0.1 and x = 0.2, therefore it may be useful in high-temperature applications.…”

“…This is due to the measurement at extremely low electric fields compared to the reported ones. We observe also a maximum dielectric constant at 200 kHz smaller than that obtained by Gaikwad at 100 kHz for the parent sample [67]. At x = 0.1 we obtained a maximum dielectric constant at 200 kHz smaller than that obtained by Gaikwad at 100 kHz [67], I. ZOUARI at 100 kHz [69] and Sahanoor Islam [72], but for x = 0.3 we obtained a maximum dielectric constant at x = 0.3 greater than that obtained by Md Sahanoor Islam [72].…”

“…When we compared our P s , P r , and E c with others, we find that our results are much lower than them for the x = 0.0 and x = 0.1 samples [3,[67][68][69][70]. This is due to the measurement at extremely low electric fields compared to the reported ones.…”

Direct Measurement of Large Electrocaloric Effect in Ba(ZrxTi1–x)O3 Ceramics

“…BTO is a basic material with a strong polarity, high permittivity, low loss tangent, large polarization, and big adiabatic temperature change (Δ T ) and is environmentally friendly. However, the Curie temperature in a BTO system approaches 120 °C, which is far from the room temperature and will be one of the disadvantages for commercialization of ECE devices because they are designed to preferably work at room temperature. Doping is an effective way to modify the BTO system; for instance, to shift the Curie temperature to room temperature, to enhance the ECE at room temperature, Zr 4+ , − Sr 4+ , Ca 4+ , − , Sn 4+ , − Hf 3+ , , Ce 4+ , , and other ionic elements with similar electronegativity are chosen to dope into the BTO system.…”

“…However, the Curie temperature in a BTO system approaches 120 °C, which is far from the room temperature and will be one of the disadvantages for commercialization of ECE devices because they are designed to preferably work at room temperature. Doping is an effective way to modify the BTO system; for instance, to shift the Curie temperature to room temperature, to enhance the ECE at room temperature, Zr 4+ , − Sr 4+ , Ca 4+ , − , Sn 4+ , − Hf 3+ , , Ce 4+ , , and other ionic elements with similar electronegativity are chosen to dope into the BTO system. Among them, Zr 4+ ions were chosen in this work because of their ionic radius (0.72 Å), which is similar to that of Ti 4+ (0.605 Å), wider sintering conditions, environmentally friendly nature, and properties of transition from a normal ferroelectric to a relaxor ferroelectric …”