Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

Panin, G. N.; Piqueras, J.; Sochinskii, N.V.; Diéguez, E.

doi:10.1063/1.118237

Cited by 14 publications

(14 citation statements)

References 18 publications

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“…2a, the PL spectrum recorded in the substrate middle (area 1 of Fig. 1b) exhibits the PL bands which are generally present in as-grown CdTe:Ge crystals and have been studied by us previously [18,20,21]. The typical PL spectrum at 80 K contains the near-band-gap FE and D-h emission, positioned at 1.580 eV (Ref.…”

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confidence: 98%

“…It was suggested that two phenomena, which could lead to the observed improvement of CdTe properties relevant to the fabrication of radiation detectors, are the dissolution of Te precipitates and an elimination of non-radiative channels of recombination due to the residual impurity outdiffusion during the VPE process [17][18][19]. Following that research, in this paper we present the results on the photoluminescence (PL) study of CdTe:Ge substrates, which form part of Hg 1Àx Cd x I 2 /CdTe heterostructures grown by the low-temperature (o250 C) VPE, using a combination of several PL techniques such as spectroscopy, cross-section mapping and profiling.…”

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confidence: 99%

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Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

Sochinskii¹,

Babentsov

Fiederle

2004

Journal of Crystal Growth

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confidence: 98%

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confidence: 99%

Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

Sochinskii¹,

Babentsov

Fiederle

2004

Journal of Crystal Growth

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“…13 The capability to obtain both spectral and spatial resolution allows us to gain quite valuable information about the defect structure of the material. Though bulk crystals have been extensively studied by luminescence techniques, not so much work has been done to characterize CdTe epitaxial layers.…”

Section: ͓S0003-6951͑97͒01947-5͔mentioning

confidence: 99%

Cathodoluminescence study of laser recrystallized CdTe layers

Fernández

Piqueras

Sochinskii

et al. 1997

Applied Physics Letters

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CdTe͑100͒/GaAs͑100͒ and CdTe͑111͒/CdTe͑111͒ layers grown by metalorganic vapor phase epitaxy ͑MOVPE͒ were investigated. The layers were recrystallized to improve their morphology by scanning the surface with a 100 m diameter spot from an Ar ion laser beam ( ϭ514.4 nm). Cathodoluminescence spectra from both as-grown and recrystallized CdTe MOVPE layers are used to monitor the effect of the recrystallization procedure. The laser recrystallization results in important changes on the spectral distribution of luminescence. Deep-level bands associated to different defects are shown to be very sensitive to the laser recrystallization procedure. The effect of the different substrates on the defect structure of the layers is also related to the changes observed in the cathodoluminescence spectra. © 1997 American Institute of Physics. ͓S0003-6951͑97͒01947-5͔Metalorganic vapor phase epitaxy ͑MOVPE͒ is a technique commonly used to grow CdTe layers on different lattice mismatched substrates like Si, GaAs, sapphire, etc. 1 These layers are used as substrates for subsequent epitaxial growth of Hg 1Ϫx Cd x Te layers for infrared applications ͑for recent examples, see Refs. 2-5͒. It is widely accepted that the properties of CdTe MOVPE layers are strongly dependent on several technological factors, among which the substrate nature is one of the most important. 6 In particular, previous studies of CdTe/sapphire and CdTe/GaAs layers grown by a low-temperature MOVPE have shown that the as-grown layers have a low quality, rough surface due to strain raised from the large lattice mismatch. [6][7][8] To overcome this problem, postgrowth laser recrystallization has been recently proposed as a method to improve the surface morphology of CdTe MOVPE layers. 8 Nevertheless, it is still an open question how the laser recrystallization procedure affects other properties of the layers besides surface morphology.Cathodoluminescence ͑CL͒ microscopy has been shown to be a very useful tool to characterize CdTe bulk crystals submitted to different technological treatments like thermal annealing, 9-11 doping, 12 or epitaxial overgrowth. 13 The capability to obtain both spectral and spatial resolution allows us to gain quite valuable information about the defect structure of the material. Though bulk crystals have been extensively studied by luminescence techniques, not so much work has been done to characterize CdTe epitaxial layers. In this letter, we report the results on cathodoluminescence studies of asgrown and laser recrystallized CdTe/GaAs and CdTe/CdTe MOVPE layers and show the effect of the laser recrystallization on the radiative defects contributing to the CL emission of the layers. The influence of the substrate on the behavior of the epilayers under laser irradiation is also reported.The samples investigated were CdTe͑100͒ and CdTe͑111͒ layers grown on GaAs͑100͒ and CdTe͑111͒ substrates by MOVPE. The layer thicknesses were in the range 4-10 m. The MOVPE growth was carried out at 340°C for 3-5 h using dimethylcadmium and diisopropiyl tel...

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“…Recently, an example of the technological compatibility of HgI 2 and CdTe has been demonstrated by growing HgI 2 and Hg 1Ϫx Cd x I 2 layers on CdTe substrates by vapor phase epitaxy ͑VPE͒. 8,9 Despite significantly different crystallographic structures of the layer and the substrate ͑layered tetragonal 10 and cubic zinc blende 11 types, respectively͒, Hg 1Ϫx Cd x I 2 /CdTe heterostructures have shown a good stability at room and elevated temperature and a structural and compositional uniformity of the layer in the wide composition range of xϽ0.7.…”

Section: Introductionmentioning

confidence: 99%

“…The structural defects in CdTe substrates generated by the VPE growth has recently been studied by the cathodoluminescence microscopic technique. 9 Following this work, in the present article we report on the structural defects in Hg 1Ϫx Cd x I 2 VPE layers studied by scanning electron microscopy ͑SEM͒ and high resolution synchrotron x-ray topography ͑SXRT͒.…”

mentioning

confidence: 99%

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

Sochinskii

Muñoz

Espeso

et al. 1997

Journal of Applied Physics

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Hg 1Ϫx Cd x I 2 20-25-m-thick layers with a uniform composition in the range of xϭ0.1-0.2 were grown on CdTe substrates by vapor phase epitaxy ͑VPE͒. The growth was carried out using an ␣-HgI 2 polycrystalline source at 200°C and in the time range of 30-100 h. The layers were studied by scanning electron microscopy ͑SEM͒ and high resolution synchrotron x-ray topography ͑SXRT͒. The SEM and SXRT images of Hg 1Ϫx Cd x I 2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI 2 bulk crystals. The effect of the growth time on these defects has been analyzed and on the basis of this it has been possible to grow Hg 1Ϫx Cd x I 2 layers with low defect density.

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Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

Cited by 14 publications

References 18 publications

Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

Cathodoluminescence study of laser recrystallized CdTe layers

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

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