Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

“…4. The spectra exhibit intense PL emission in the 1.2-1.8 eV spectral range, which is typical for Cd(Zn)Te crystals and epitaxial layers [1][2][3][4]6,8,9,18]. As it was expected, the spectra have similar PL bands for CdTe and CdZnTe nanopixels, and there is the shift in the maximum of high-energy edge emission with an increase in Zn concentration.…”

“…There has been considerable progress in the growth and characterization of Cd(Zn)Te bulk crystals and Cd(Zn)Te-based heterostructures suitable for these detectors (see [2][3][4] and [5][6][7][8][9], respectively). The latest advances in this area suggest that Cd(Zn)Te-based epitaxial heterostructures (and, particularly, nanostructures) could be of great concern for the development of high-resolution multi-pixel imaging detectors [10,11].…”

Formation of CdTe columnar structures prompted by In- and Ga-rich nanodots

“…There has been considerable progress in the growth and characterization of CdTe bulk crystals and CdTe-based heterostructures suitable for the developing of X-and gamma-ray radiation detectors [1][2][3][4]. The latest advances in these areas 11.202 suggest that CdTe-based nanostructures could be of great concern for the high-resolution multi-pixel detectors [5,6].…”

Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures

“…(as several examples, see Refs. [1][2][3][4][5][6]). Regarding to semiconductors, the main advantage of IRPL technique is the possibility to visualize the spatial distribution of structural defects all over the volume of investigated sample.…”