Effective Electron Mass in Quantum Wires of III–V, Ternary and Quaternary Materials

Abstract

In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum wires (QWs) of III-V, ternary and quaternary materials on the basis of three and two band models of Kane within the framework of k x p formalism. It has been found, taking QWs of InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(t) that the 1D EEM increases with electron concentration per unit length and decreases with increasing film thickness respectively. For ternary and quaternary materials the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the 1-D materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test. The results of this paper find two applications in the fields of nanoscience and technology.

Calculating intersubband transition energy in T-shaped quantum wire using FD technique

“…Quantum confinement is achieved because dimension of the structures are less than or comparable to de-Broglie wavelength, which results in quantization of energy levels along one, two or three dimensions, realized as quantum well, wire and dot. Different geometries [7][8] and material compositions [9][10] of quantum wires are already considered to achieve devices with desired performance, and some novel shapes are also explored recently [11][12][13]. Among them, Tshaped quantum wire has attracted researchers due to the larger exciton binding energy and enhanced oscillator strength [14].…”