Effective mass of InN epilayers

Fu, S. P.; Chen, Y. F.

doi:10.1063/1.1787615

Cited by 133 publications

(66 citation statements)

References 21 publications

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“…Crucial for understanding of electrical and optical performance is the precise knowledge of intrinsic parameters such as the Γ-point conduction band curvature and the electron mobility, for example. The electron effective mass parameters has revealed substantial nonparabolicity upon renewed investigations, concordant with recent realization that the InN band gap is narrower than previously thought [2][3][4][5]. We present here a study of the anisotropy of electron effective mass and mobility in wurtzite InN employing a newly developed optical precision technique: Infrared Magneto-optic Generalized Ellipsometry (IRMOGE) proceeding beyond earlier achievements were we used combined Infrared Spectroscopic Ellipsometry (IRSE) and electrical Hall effect measurements for InN effective mass determination.…”

Section: Introductionmentioning

confidence: 71%

Anisotropy of the Γ‐point effective mass and mobility in hexagonal InN

Hofmann

Chavdarov

Darakchieva

et al. 2006

Phys. Status Solidi (c)

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We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8×10 17 cm −3 to 9.5 ×10 18 cm −3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m ⊥ = 0.047m0 and m = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm 2 /(Vs) to 800 cm 2 /(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

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Section: Introductionmentioning

confidence: 71%

Anisotropy of the Γ‐point effective mass and mobility in hexagonal InN

Hofmann

Chavdarov

Darakchieva

et al. 2006

Phys. Status Solidi (c)

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“…This small activation energy is consistent with the derived exciton binding energy ∼ 2 − 3 meV if assuming InN dielectric constant ǫ ∼ 14, and effective mass for electron m * e = 0.05m 0 and for hole m * h = 0.3m 0 . 6,41,58,59 These studies suggest the recombination process changes from free-exciton emission at low temperatures to electron-hole plasma emission at high temperatures in the presented undoped InN nanowires. Such measurements were also performed on undoped InN nanowires with lengths up to ∼ 4 µm, which show similar scaling behavior (see open triangles in Fig.…”

Section: Resultsmentioning

confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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“…22). Bearing in mind that m * is inversely proportional to 0 μ and that an effective electron mass for InN between 0.04×m 0 and 0.05×m 0 (note the value of 0.04×m 0 used by us) has been recently established, [23][24][25] the mobilities predicted in this work seem to be realistic.…”

Section: Functional Electrical and Electronic Materials And Devicesmentioning

confidence: 99%