Effective Masses in SiC Determined by Cyclotron Resonance Experiments

Abstract

The current status and future perspectives of cyclotron resonance (CR) experiments in SiC are given, with a brief review of published results. CR experiments have so far been successful only in 3C, 4H and 6H SiC. Among them, 3C has the best established properties. The location of the conduction band (CB) minima in 3C SiC has been shown by far‐infrared CR experiments to lie at the X‐point of the Brillouin zone, without the camel's back structure. The constant‐energy surfaces near the CB minima are ellipsoids, with the transverse and longitudinal effective mass values as m t* = (0.247 ± 0.011) m0 and m l* = (0.677 ± 0.015) m0. The dominant electron scattering mechanism is shown to be the acoustic‐phonon scattering in a very wide temperature range up to room temperature. The electron effective mass tensor in 4H SiC has been fully resolved by the optically detected CR (ODCR) studies at 35 GHz as: m(MΓ) = (0.58 ± 0.01) m0, m(MK) = (0.31 ± 0.01) m0, and m(ML) = (0.33 ± 0.01) m0. The anisotropic electron effective tensor in 6H SiC predicted by theories has, however, not been obtained so far. The limited resolution of the ODCR experiments at 9 GHz only provides the anisotropy of the electron effective masses perpendicular and parallel to the 〈0001〉 direction: m t* = (0.42 ± 0.02) m0 and m l* = (2.0 ± 0.2) m0. Future ODCR work at higher frequencies is required to fully resolve the principal values of the mass tensor. Though the CR studies are not able to locate the exact position of the CB minima, they are at least consistent with the theoretical predictions that they lie at the M‐point in 4H SiC whereas in 6H SiC they are positioned at the halfway between the M‐ and L‐point in the Brillouin zone. In both 4H and 6H SiC much effort should be made in the future to obtain information on the band non‐parabolicity, the exact location of the CB minima, and also on the dominant carrier scattering mechanism. No reliable data of hole effective masses have been obtained for any polytype.

Ionization Energies of Phosphorus Donors in 6H-SiC

“…Although this theory is originally developed for cubic semiconductors with two independent components of the effective mass (m ⊥ , m  ), Suttrop et al [6] gave an example for N donors in 6H-SiC that the corresponding ionization energies are correctly obtained from this theory also for hexagonal SiC. Taking into account the effective electron masses reported by Chen et al [9] (m ⊥ = 0.42 m 0 , m  = 2.0 m 0 ), the mass anisotropy parameter 1 -(m ⊥ / m  ) 1/3 is equal to 0.41, which is smaller than the value of 0.52. In this case, the simplified approximation according to Gerlach and Pollmann [10] can be applied and the excited states E nlm (m ⊥ , m  ) can analytically be calculated (see horizontal lines in Fig.…”

Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

“…Since the electric field is applied along the 〈0001〉 direction, i.e. the M-L direction in the k-space, we set the effective mass to m * = 0.333 m 0 for the 1st CBM and m * = 0.744 m 0 for the 2nd CBM, and the origin of the energy to V 0 = 0 for the 1st CBM and V 0 = ΔE 1−2 = 0.141 eV for the 2nd CBM; these values are determined in our previous EPM study 26) with reference to the experimental values 28,29) and the theoretical values. 30)…”

Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC

“…In addition, the direction dependence of the mobility should be considered as well, especially in 4H-SiC. The hexagonal crystal structure of 4H-SiC causes anisotropic physical properties such as the effective mass, [11][12][13] the dielectric constant, [14,15] the impact ionization coefficient, [16][17][18] and the thermal conductivity. [19] Electron mobility has also been reported to exhibit anisotropy by several experiments [20][21][22][23][24][25] and the electron mobility along the h0001i direction (c-axis) shown in Figure 1 is known to be higher than that perpendicular to the c-axis.…”