Effective role of thickness on structural, electrical and optical properties of lead sulphide thin films for photovoltaic applications

Veena, E.; Bangera, Kasturi V.; Shivakumar, G. K.

doi:10.1016/j.mseb.2017.06.003

Cited by 20 publications

(6 citation statements)

References 24 publications

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“…Generally, the % S decreased slightly as the annealing temperature was increased from 250 to 400°C (figure 4). However, at all cases, the ratio of Pb to S was approximately 1 : 1 as reported elsewhere in the literature [34]. royalsocietypublishing.org/journal/rsos R. Soc.…”

Section: Resultssupporting

confidence: 83%

“…PbS can be size-tuned to absorb strongly over a wide range of wavelength on the electromagnetic spectrum thereby shifting its absorption edge into the near infrared region [33]. PbS has widely been used in several opto-electronic devices which include photovoltaic cells [34], sensors [35], thermoelectrics [36], photodetectors [37], diodes [38], catalyst [39], photoconductors [40] and solar concentrators [41]. We have previously reported the syntheses of PbS nanoparticles and thin films using xanthates as precursors [6,21].…”

Section: Introductionmentioning

confidence: 99%

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Lead ethyl dithiocarbamates: efficient single-source precursors to PbS nanocubes

et al. 2019

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Lead ethyl dithiocarbamates have been successfully used as single-source precursors for the deposition of PbS using spin coating followed by annealing at moderate temperatures. The thin films were characterized using a powder X-ray diffractometer and were found to be face-centred cubic with the (200) plane being the most preferred orientation. Scanning electron microscopy images showed the formation of well-defined cubes. Optical band gaps of PbS thin films were estimated using Tauc plots as 0.72, 0.73 and 0.77 eV at annealing temperatures of 250, 300 and 400°C. These band gaps were all blue shifted from the bulk value of 0.41 eV. Energy-dispersive X-ray analysis was used to determine the composition of the thin films which showed an approximately 1 : 1 Pb to S ratio.

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Section: Resultssupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Lead ethyl dithiocarbamates: efficient single-source precursors to PbS nanocubes

et al. 2019

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“…For higher P He (400 and 500 mTorr), the relative decrease of the resistivity could result from the increased adsorption of hydroxyl groups in the films (as revealed by FTIR). This being said, all the resistivity range (0.05 to 15 and to 20 Ω·cm) exhibited by our PLD-PbS films remains significantly lower than the values reported for spray-pyrolysis deposited PbS films, for example, for which the resistivity values were in the 145 to 1800 Ω·cm range for film thicknesses in the 520 down to 150 nm, respectively [ 57 ]. This shows that despite the relative porosity discussed above, the PLD-PbS films remain highly pure, densely packed, and more conductive in comparison with their chemically synthesized counterparts.…”

Section: Resultsmentioning

confidence: 65%

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

et al. 2021

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This work focuses on the dependence of the features of PbS films deposited by pulsed laser deposition (PLD) subsequent to the variation of the background pressure of helium (PHe). The morphology of the PLD-PbS films changes from a densely packed and almost featureless structure to a columnar and porous one as the He pressure increases. The average crystallite size related to the (111) preferred orientation increases up to 20 nm for PHe ≥ 300 mTorr. The (111) lattice parameter continuously decreases with increasing PHe values and stabilizes at PHe ≥ 300 mTorr. A downshift transition of the Raman peak of the main phonon (1LO) occurs from PHe = 300 mTorr. This transition would result from electron–LO–phonon interaction and from a lattice contraction. The optical bandgap of the films increases from 1.4 to 1.85 eV as PHe increases from 50 to 500 mTorr. The electrical resistivity of PLD-PbS is increased with PHe and reached its maximum value of 20 Ω·cm at PHe = 300 mTorr (400 times higher than 50 mTorr), which is probably due to the increasing porosity of the films. PHe = 300 mTorr is pointed out as a transitional pressure for the structural and optoelectronic properties of PLD-PbS films.

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“…The plots of the (Ah )² as a function of h are shown in fig 1. in accordance with equation 2. The film thickness dependence of band gap energy can be due to factors like the existence of amorphous phases in thin films, Quantum confinement effect [6,19] and change in barrier height owing to change in grain size in polycrystalline films [6].…”

Section: Optical Characterizationmentioning

confidence: 99%

“…It's high absorbance within the UV-Vis spectral vary and high transmittance within the infrared spectral region of allowing its use in infrared detectors [2,9]. Thin film of lead sulphide is helpful within the manufacture of transistors [3], photoconductive infra-red detectors [4], windows, contact rectifiers, prisons, lenses [5], photovoltaic application in solar cells [6], solar control coating [7], optoelectronic devices [8], antireflection coatings and for solar thermal applications [9] in flat-plat collectors, house heating for solar chick brooding (11), Photo resistance, diode lasers, humidity and temperature sensors, decorative coatings and solar control coatings [12], pollution monitor [25]. Many techniques are reported for the deposition of thin films like Chemical spray deposition (CSP) [26], Molecular beam epitaxy [13], chemical vapor deposition (CVD) [15], sol-gel spin coating [16], successive ion layer absorption and reaction (SILAR) method [4], chemical bath deposition (CBD) [13] ect.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thickness on Optical and Structural Properties of Lead Sulphide (PbS) Thin Film Prepared by Chemical Bath Deposition (CBD)

2020

CMR

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Nanocrystalline PbS thin films were deposited on glass substrates with various deposition times using chemical bath deposition technique. PbS thin films were prepared by using a solution of Lead nitrate and thiourea by using NaOH salt as a complexing agent and ammonia solution as a pH adjuster at 65 0 C. The study was carried out for thickness in the range of (0.16-1.03m). The structural properties were carried out by X-ray diffraction (XRD). The X-ray diffraction patterns reveal that the films exhibit the cubic face centered structure. The crystalline sizes of the films increased with increasing film thickness. The morphological properties were studied by SEM and showed that films were well adherent to the substrate, uniform, small crystal size and covered the entire substrate surface completely. The optical properties of these films have been studied and show that PbS thin films have the values of energy gap varied between (0.88-1.34 eV) with increasing film thickness.

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Effective role of thickness on structural, electrical and optical properties of lead sulphide thin films for photovoltaic applications

Cited by 20 publications

References 24 publications

Lead ethyl dithiocarbamates: efficient single-source precursors to PbS nanocubes

Lead ethyl dithiocarbamates: efficient single-source precursors to PbS nanocubes

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

Effects of Thickness on Optical and Structural Properties of Lead Sulphide (PbS) Thin Film Prepared by Chemical Bath Deposition (CBD)

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