Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Lin, Guangyang; Qian, Kun; Ding, Haokun; Qian, Jinhui; Xu, Jianfang; Wang, Jianyuan; Ke, Shaoying; Huang, Wenhu; Chen, Songyan; Li, Cheng

doi:10.2139/ssrn.4343359

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“…Material Fabrication and Characterization: The GeSn epilayer was grown on (001) oriented n-Ge substrate with an As doping concentration of ≈1 × 10 17 cm −3 using magnetron sputtering epitaxy technique. [40,41] Before growing GeSn, the Ge substrate was successively cleaned by acetone, ethyl alcohol, and de-ionized water in an ultrasonic bath, then was immersed into diluted hydrochloric acid solution, hydrofluoric acid solution, and de-ionized water in turn to remove the surface oxide, followed by spin-drying treatment. After that, the cleaned n-Ge substrate was fixed on the stainless-steel holder and loaded into the sputtering chamber with a base pressure of 5.0 × 10 −5 Pa.…”

Section: Methodsmentioning

confidence: 99%

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Cai,

Li,

Qian

et al. 2023

Advanced Optical Materials

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In this work, a high‐performance two‐terminal n‐MoSe2/p‐GeSn/n‐Ge van der Waals (vdW) heterojunction phototransistor (HPT) is proposed and demonstrated for short‐wave infrared (SWIR) detection. With a high Sn content of 17.1% in the GeSn base region, the cutoff wavelength is extended to beyond 2400 nm. The substantial electron/hole injection ratio resulting from the large bandgap offset between the MoSe2 emitter and the GeSn base enables the harvesting of high photocurrent gain. A record high responsivity of 12.75 A W−1 and an excellent specific detectivity of 1.74 × 1010 Jones at 2250 nm are achieved under a collector‐emitter bias of 1.0 V at room temperature. A response time of 462 µs at 1550 nm outbalancing that of most vdW junction‐based devices is obtained for the non‐optimized devices. Those results show that the mixed‐dimensional GeSn HPT is one of the promising candidates for detection of infrared band above 2 µm.

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Section: Methodsmentioning

confidence: 99%

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Cai,

Li,

Qian

et al. 2023

Advanced Optical Materials

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Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Cited by 1 publication

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High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

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Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Cited by 1 publication

References 0 publications

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

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Product

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High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection