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In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was proposed. After thermal treatment of molecular-beam-epitaxy-grown GeSn, self-assembled Sn nanodots (NDs) were formed on surface and the spontaneous emission from GeSn direct band was enhanced by ∼5-fold. Employing the self-assembled Sn NDs as template, vertical GeSn NWs with a diameter of 25 ± 6 nm and a density of 2.8 × 109 cm−2 were obtained by Cl-based ICP dry etching technique. A prototype GeSn NW photodetector (PD) with rapid switching ability was demonstrated and the optoelectronic performance of Ge NW PD was systematically studied. The GeSn NW PD exhibited an ultralow dark current density of ∼33 nA/cm2 with a responsivity of 0.245 A/W and a high specific detectivity of 2.40 × 1012 cm Hz1/2 W−1 at 1550 nm under −1 V at 77 K. The results prove that this method is prospective for low-cost and scalable fabrication of GeSn NWs, which are promising for near infrared or short wavelength infrared nanophotonic devices.

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