The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % &lt; x &lt; 15 %) epilayers with low temperature molecular beam epitaxy

Qian, Kun; An, Yi; Cai, Hongjie; Yang, Kaisen; Qian, Jinhui; Ding, Haokun; Lin, Guoxing; Wang, Jianyuan; Xu, Jianfang; Huang, Wei; Chen, Songyan; Li, Cheng

doi:10.1016/j.jcrysgro.2022.126954

Cited by 3 publications

(4 citation statements)

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“…13 For both growth methods, the epitaxial breakdown is reported for compressively strained GeSn layers when the thickness and strain energy exceed a critical value. 14,15 In this work, we report on the investigation of the growth of GeSn/Ge by MBE using Sn flux and temperature gradients to increase the Sn content and material quality. The Sn and temperature gradients were specifically designed to reduce the diffusion of Sn under conditions of compressive strain.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The spontaneous relaxation, which occurs at a critical thickness, facilitates an enhanced incorporation of Sn. − Meanwhile, for MBE growth, which requires a lower growth temperature (100–200 °C) and typically lower growth rate, the GeSn layers exhibit fully or partially strained growth for relatively higher Sn content . For both growth methods, the epitaxial breakdown is reported for compressively strained GeSn layers when the thickness and strain energy exceed a critical value. , …”

Section: Introductionmentioning

confidence: 99%

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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures

M. Eldose,

Stanchu,

Das

et al. 2023

Crystal Growth & Design

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We investigated the process of Sn incorporation and surface segregation for compositionally graded Ge 1−x Sn x epilayers grown on highquality Ge (001) substrates. The growth resulted in pseudomorphic GeSn layers with a ∼6% maximal Sn fraction at a constant substrate temperature. The maximal fraction of Sn was increased to 9.0% when the growth temperature was continuously lowered while increasing the Sn flux. The analysis of surface droplets and SIMS profiles of elemental composition give evidence of Sn rejection during the growth, potentially associated with a critical energy of elastic strain. The intentional reduction of the coherent strain by decreasing the Sn flux near the sample surface has been shown to trap a higher fraction of Sn in the Ge 1−x Sn x layer and lower surface segregation. Our results demonstrate that strain relief by misfit dislocations in the compositionally graded layer is inhibited, which leads to Sn segregation. Specifically, the compressive strain in the graded Ge 1−x Sn x epilayer is effectively "zero" near the interface with the Ge substrate and increases up to about −1.5 × 10 −2 near the surface. Thus, although the nucleation of a dislocation may reduce the compressive strain for the top region of the epilayer, it is not beneficial for the bottom region.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures

M. Eldose,

Stanchu,

Das

et al. 2023

Crystal Growth & Design

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“…Non-equilibrium deposition techniques * Author to whom any correspondence should be addressed. such as molecular beam epitaxy (MBE) [13][14][15][16], chemical vapor deposition (CVD) [17][18][19] and sputtering epitaxy [20,21] etc have been utilized to explore deposition of direct bandgap GeSn alloys.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the low deposition rate, MBE of GeSn has to be conducted under low temperatures (typically <200 • C) to avoid Sn segregation [13,14]. Although Sn-rich GeSn can be obtained, the low-temperature deposition process results in kinetic roughing of the GeSn surface, which gradually leads to epitaxy breakdown [15] and/or hinders relaxation of the compressive strain in the GeSn film [16]. For these reasons, efficient light emission of MBE-grown GeSn is still under development [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Lin

Qian

Ding

et al. 2023

J. Phys. D: Appl. Phys.

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In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 film is obtained through sputtering epitaxy at a record high temperature of 405oC. The PL peak intensity of the sputtering-grown GeSn is enhanced by 21 times compared to that of GeSn with similar Sn content grown by molecular beam epitaxy at 150oC. The PL intensity ratio between the sputtering-grown GeSn and Ge virtual substrate (VS) reaches a value of 18. Power-dependent and temperature-dependent PL characterizations demonstrate that band-to-band recombination dominates in the sputtering-grown GeSn film. The results indicate that high-temperature sputtering epitaxy, which has a merit of low cost and high-productivity potential, is promising to prepare high-quality GeSn films for optoelectronic applications.

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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Lin

Qian

Ding

et al. 2023

Applied Surface Science

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The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Cited by 3 publications

References 30 publications

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

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The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Cited by 3 publications

References 30 publications

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Contact Info

Product

Resources

About

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures

Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures