Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Lin, Guoxing; Qian, Kun; Ding, Haokun; Qian, Jinhui; Xu, Jianfang; Wang, Jianyuan; Ke, Shaoying; Huang, Wei; Chen, Songyan; Li, Cheng

doi:10.1016/j.apsusc.2023.157086

Applied Surface Science

2023

DOI: 10.1016/j.apsusc.2023.157086

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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Guoxing Lin

Kun Qian

Haokun Ding

et al.

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Cited by 9 publications

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High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Cai,

Li,

Qian

et al. 2023

Advanced Optical Materials

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In this work, a high‐performance two‐terminal n‐MoSe2/p‐GeSn/n‐Ge van der Waals (vdW) heterojunction phototransistor (HPT) is proposed and demonstrated for short‐wave infrared (SWIR) detection. With a high Sn content of 17.1% in the GeSn base region, the cutoff wavelength is extended to beyond 2400 nm. The substantial electron/hole injection ratio resulting from the large bandgap offset between the MoSe2 emitter and the GeSn base enables the harvesting of high photocurrent gain. A record high responsivity of 12.75 A W−1 and an excellent specific detectivity of 1.74 × 1010 Jones at 2250 nm are achieved under a collector‐emitter bias of 1.0 V at room temperature. A response time of 462 µs at 1550 nm outbalancing that of most vdW junction‐based devices is obtained for the non‐optimized devices. Those results show that the mixed‐dimensional GeSn HPT is one of the promising candidates for detection of infrared band above 2 µm.

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High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Cai,

Li,

Qian

et al. 2023

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Zhu,

Yang,

Ding

et al. 2024

Applied Surface Science

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Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing

Tan,

Ke,

et al. 2024

Applied Surface Science

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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Cited by 9 publications

References 47 publications

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing

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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Cited by 9 publications

References 47 publications

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing

Contact Info

Product

Resources

About

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection