Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

Abstract

III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect on the crystal structure were investigated via analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data. Continuous redshift and a substantial increase in intensity of the photoluminescence emission spectra were observed upon increase of nitrogen content. The effect of antiphase disorder in GaP buffer on the GaPN epilayer properties was studied. It was found that antiphase boundaries, protruding from the GaP/Si to the GaPN/GaP heterointerface, change their orientation and self-annihilate in the dilute nitride layer even with a low (0.5%) nitrogen content.

Synthesis and Optical Characterization of GaAs Epitaxial Nanoparticles on Silicon

“…We also note that according to the obtained AFM images, we found twinned nanoparticles that are rotated by 180°around the substrate normal demonstrating an equivalent set of facets. Rotational twinning was also observed on the reflection high-energy electron diffraction (RHEED) pattern taken along the [1][2][3][4][5][6][7][8][9][10] Si direction and showing diffraction spots corresponding to the twinned cubic ZB structure of GaAs.…”

“…1 The main technological issues of planar III−V/Si heterostructures are concerned with the large lattice mismatch 2 and the formation of antiphase domains 3 strongly affecting electrical and optical material properties. Despite recent advances in epitaxial growth, including the use of multilayer metamorphic graded buffer layers, 4 no scalable technology for device fabrication exists today.…”

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

“…Stoichiometric conditions were estimated in accordance with the results of studies of GaP synthesis on Si (001) at the same growth temperatures T gr . According to our previous observations, V/III ratio values lower than 6 result in an accumulation of liquid Ga droplets on the GaP/Si sample surface. , …”

“…According to our previous observations, V/III ratio values lower than 6 result in an accumulation of liquid Ga droplets on the GaP/Si sample surface. 85,86 Double-sided polished sapphire wafers were used for growth to provide further optical studies in transmission geometry. Wafers were cleaned by subsequent boiling in isopropanol alcohol and a dilute solution of NH 4 OH/H 2 O 2 /H 2 O (1:1:3) and then rinsed with deionized water.…”

Theoretical design of a photodetector based on a two-dimensional SnSe2/GaP type-II heterostructure

“…These devices have been used as light-emitting diodes (LEDs), 38 semiconductor electrodes, 39 semiconductor lasers, 40 and integrated circuits. 41 Bolshakov et al 42 successfully grew GaP(N)/GaP heterostructures on Si(001) using plasma-assisted molecular beam epitaxy and found a significant increase in the intensity of its photoluminescence spectrum. Xiong et al 43 studied the electronic and photology features of the ZnS/GaP heterostructure, where the semiconductor–metal transition was achieved by applying strain and electric fields.…”