Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

Yamaguchi, Shimpei; Bayindir, Z.; He, Xiaoli; Uppal, S.; Srinivasan, P.; Yong, Chloe; Choi, Dae Ro; Joshi, Manoj; Yang, Ha-Young; Hu, Owen; Samavedam, Srikanth; Sohn, Dong Kyun

doi:10.1016/j.microrel.2017.04.004

Cited by 7 publications

(2 citation statements)

References 2 publications

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“…An undoped or low-doped channel is commonly adopted for advanced devices to avoid this uncertainty. Therefore the WFM gate was introduced as a solution to modulate V t in FinFET devices [7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks

Chang¹,

Li²,

Hsu³

et al. 2021

IEEE Open J. Nanotechnol.

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High-k metal gate technology improves the performance and reduces the gate leakage current of metal-oxide-semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V t |) but also converted n-to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n-and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform.

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Section: Introductionmentioning

confidence: 99%

“…Titanium nitride (TiN) is a typical pWFM. The work function of TiN depends on the ratio of Ti to N and metal thickness [7][8][9]16]. An increase in TiN thickness changes WFM and V t [11,17].…”

Section: Introductionmentioning

confidence: 99%

Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks

Chang¹,

Li²,

Hsu³

et al. 2021

IEEE Open J. Nanotechnol.

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Fermi-level pinning in full metal/high-k/SiO2/Si stacks

Huang

Zhang

et al. 2017

Journal of Applied Physics

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Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types.

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Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices

Arimura

Ragnarsson

Oniki

et al. 2021

2021 IEEE International Electron Devices Meeting (IEDM)

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Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

Cited by 7 publications

References 2 publications

Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks

Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks

Fermi-level pinning in full metal/high-k/SiO2/Si stacks

Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices

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