Perovskite solar cells with a planar p-i-n device structure offer easy processability at low temperatures, suitable for roll-to-roll fabrication on flexible substrates. Herein we investigate different hole transport layers (solution processed NiO x , sputtered NiO x , PEDOT:PSS) in planar p-i-n perovskite solar cells using the triple cation lead halide perovskite Cs 0.08 (MA 0.17 FA 0.83 ) 0.92 Pb(I 0.83 Br 0.17 ) 3 as absorber layer. Overall, reproducible solar cell performances with power conversion efficiencies up to 12.8% were obtained using solution processed NiO x as hole transport layer in the devices. Compared to that, devices with PEDOT:PSS as hole transport layer yield efficiencies of approx. 8.4%. Further improvement of the fill factor was achieved by the use of an additional zinc oxide nanoparticle layer between the PC 60 BM film and the Ag electrode.