Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications

Hu, Jiumei; Chang, T. C.; Wu, Chia‐Hua; Chen, L. J.; Hsiung, C. S.; Hsieh, W. Y.; Lur, W.; Yew, Tri‐Rung

doi:10.1116/1.582326

Cited by 17 publications

(1 citation statement)

References 7 publications

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“…[10][11][12][13] The accelerator and inhibitor can achieve super-equal thickness filling of the trenches through the synergistic effect of competitive adsorption. 14,15 The leveler can be adsorbed on the high current density area of the negatively charged cathode surface, which can slow down the electrodeposition at that place without affecting the deposition of the low current density area to achieve a uniform film effect. 16 However, the consumption of these additives in electrolyte results in a much higher electrical resistance of as-deposited Cu films than pure Cu due to the unavoidable introduction of non-metallic impurities.…”

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The Influence of Leveler on the Impurity Behavior of Electroplated Cu Films During Laser Annealing

Tan

Han

Chen

et al. 2021

J. Electrochem. Soc.

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Leveler is one of the key factors for the fabrication of electroplated Cu with superior electrical properties in Cu interconnect metallization. Rarely notice has been paid on the influence of leveler on the impurity behavior of electroplated Cu during recrystallization. In this study, the impacts of five different levelers on the impurity behavior during recrystallization of the electrochemical deposited Cu films are studied in terms of microstructure and electrochemical behavior. Five levelers perform differences in molecular types and inhibition ability on Cu deposition. The former will affect the initial impurity content of the original crystal, while the latter is directly related to the amount of impurity diffusion during recrystallization. This study shows the direct evidence that two factors affect the impurity behavior of the electroplated Cu films during laser annealing and thus affect the resistance performance. We find that the films obtained by using leveler that has a reasonable inhibitory ability and incorporates the lowest initial impurity content shows the largest resistance drop during recrystallization. We believe the findings are meaningful for the selection of levelers to improve electrical property in the metallization of electroplated copper interconnects.

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