Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-<i>k</i>passivation layer

Kawada, Yuuki; Hanawa, Hideyuki; Horio, K.

doi:10.7567/jjap.56.108003

Cited by 10 publications

(7 citation statements)

References 18 publications

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“…8 and 9, the breakdown voltage increases as ε r increases. This is because the electric field at the drain edge of gate is reduced when ε r becomes high [28], as is similarly shown in Fig. 4.…”

Section: Effects Of Acceptor Densitysupporting

confidence: 55%

“…IN A BUFFER LAYER Next, we describe the case with a Fe-doped semi-insulating buffer layer where a deep acceptor above the midgap is considered [27], [28]. Here, we study the dependence of breakdown characteristics on the deep-acceptor density in the buffer layer N DA and the relative permittivity of the passivation layer ε r .…”

Section: Effects Of Acceptor Densitymentioning

confidence: 99%

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura

Ueda

Kawada

et al. 2018

IEEE Trans. Electron Devices

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We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer, and the results are compared with those having a normal SiN passivation layer. As a result, it is found that the breakdown voltage is enhanced particularly in the cases with relatively short field plates because the reduction in the electric field at the drain edge of gate effectively improves the breakdown voltage in the case with the high-k passivation layer. In the case with the moderate-length field plate, the enhancement of breakdown voltage due to the high-k passivation layer occurs because the electric field profiles between the field-plate edge and the drain become more uniform. It is also studied how the breakdown voltage depends on a deep-acceptor density in the Fe-doped semiinsulating buffer layer when a high-k passivation layer is used. It is shown that the breakdown voltage increases with increasing the relative permittivity of the passivation layer ε r and with increasing the deep-acceptor density N DA . When ε r = 60 and N DA = 2-3 × 10 17 cm −3 at the gate length of 0.3 μm, the breakdown voltage becomes about 500 V at a gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of about 3.3 MV/cm between the gate and the drain. Index Terms-2-D analysis, breakdown characteristics, buffer layer, GaN HEMT, high-k passivation layer. I. INTRODUCTION N OWADAYS, AlGaN/GaN HEMTs are attractive for applications to high-power microwave devices and highpower switching devices [1], [2]. It is well known that introducing a field plate enhances the power performance of AlGaN/GaN HEMTs as well as GaAs FETs [3]-[5]. This occurs because by introducing a field plate, the current collapse is reduced [6], [7], and the breakdown voltage increases [8]-[10]. The increase in breakdown voltage occurs because the electric field at the drain edge of gate is reduced by introducing a field plate.

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Section: Effects Of Acceptor Densitysupporting

confidence: 55%

Section: Effects Of Acceptor Densitymentioning

confidence: 99%

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura

Ueda

Kawada

et al. 2018

IEEE Trans. Electron Devices

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“…The existence of deep-acceptor traps in the C-doped buffer results in a high voltage-dependent current collapse, whereas Fe-doping only causes mild current collapse thanks to the lack of these deep-acceptor traps [14]. Moreover, buffer leakage current is smaller in the Fe-doped structures due to the higher energy barrier between the channel and the buffer layer [15].…”

Section: Gan Fabrication Technologymentioning

confidence: 99%

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Akoglu

Sütbaş

Özbay

2022

Int. J. Microw. Wireless Technol.

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In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$ m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$ m AlGaN/GaN on SiC technology.

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“…The Poisson equation, continuity equation and energy conservation equation were solved [20,21]. In order to obtain accurate device breakdown characteristics under strong electric field, impact ionization model is introduced in the simulation [22][23][24]. The generation rate in the impact ionization model can be expressed as…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

The effect of high-k passivation layer on off-state breakdown voltage of AlGaAs/InGaAs HEMT

Sun¹,

Zhong²,

Mei³

et al. 2021

JOR

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In this paper, the effects of different relative permittivity (εr) of the passivation layer on off-state breakdown voltage of AlGaAs/InGaAs HEMTs are analyzed by ISE-TCAD. It is shown that as εr value increases, the off-state breakdown voltage increases. When the εr value increased to 80, the off-state breakdown voltage increased from 17.23V to 24.13V by 40.9%. This is because the peak value of electric field at the proximity of gate edge is reduced with the increase of εr value and it can lead to the improvement of the off-state breakdown voltage of device. Meanwhile, the electric field peak value near the drain edge increases with the increase of the εr value, leading to an increase in the ionization probability of electron-hole ionization under the the grid-drain area. In addition, the results also show that the channel current (IDS) and transconductance (gm) of the device are slightly reduced by the passivation layer with a high εr value, while the specific channel on-resistance is hardly degraded. Therefore, the passivation layer with a high εr value can effectively improve the breakdown voltage of the device without sacrificing the DC characteristics of the device.

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Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Cited by 10 publications

References 18 publications

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

The effect of high-k passivation layer on off-state breakdown voltage of AlGaAs/InGaAs HEMT

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