Effects of Al and Sn dopants on the structural and optical properties of ZnO thin films

Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Xiao, Chumin; Li, Zhuliang; Hu, Guanghui; Wei, Zhigang

doi:10.1016/j.spmi.2012.11.003

Cited by 61 publications

(25 citation statements)

References 43 publications

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“…Furthermore, the lower of transmittance Sn-doped thin film was attributed to the scattering effect at higher doping concentration and might be due to the increasing of ratio metal to oxygen [16,17]. The average transmittance of 96 % had been achieved in this work that comparable and slightly higher than average transmittance reported by Pan et al [18]. Moreover, the thin films that allow high percentage of spectrum of light to penetrate in the visible region wavelength might be useful for solar cell application such as dye sensitized solar cell [19].…”

Section: Structural Propertiessupporting

confidence: 57%

Structural, Optical and Electrical Properties of Nano-structured Sn-doped ZnO Thin Film via Sol Gel Spin Coating Technique

et al. 2015

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In this work, the Sn-doped ZnO thin films were prepared by Sol gel Spin coating technique on glass substrates at different concentrations of Sn 0, 0.5, 1.5, 1, 2.0 and 3 at.%. The surface morphology reveals that the average particle size of nano-structured Sn-doped ZnO thin films become smaller as the Sn concentrations increased as well as decreasing of average roughness. The optical band gaps were increased, while the resistivity of Sn-doped ZnO thin films were decreased when the Sn concentrations increased. The films doped with 2 at.% exhibited the best properties of average transmittance; RMS average roughness and resistivity were 96 %, 1.850 nm and 7.7 × 10 2 Ω cm, respectively.

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Section: Structural Propertiessupporting

confidence: 57%

Structural, Optical and Electrical Properties of Nano-structured Sn-doped ZnO Thin Film via Sol Gel Spin Coating Technique

et al. 2015

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“…It is seen I Table 2 that the crystallite size is decreased except for 2% Sn with the increase in Sn content. The lattice parameter of the films are determined by the following relation [8,11,22] :…”

Section: Resultsmentioning

confidence: 99%

“…Among metal oxide semiconductors, Zinc oxide (ZnO) has been extensively investigated due to its excellent physical properties and applications in commercial and scientific devices [1,[3][4][5][6][7]. This II-VI group n-type semiconductor is also one of the most important materials for the next generation devices [5] with a wide bandgap (3.37 eV) [1,2,8,9,[11][12][13]18], large exciton binding energy (60 meV) [10][11][12][13][14]18], low resistivity and high transparency in the visible range and high light trapping characteristics [8]. Due to these properties, this material is of considerable interest for practical applications such as photonic devices [15], gas sensors [3,8,9,15,16] and dye-sensitized solar cells [3,9,15,16,18] light emitting diodes (LED's), laser systems [3], transparent electrodes [3,8,9], piezoelectric device [8,16], flexible displays [17], surface acoustic wave devices (SAW) [9,16].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

Aydın

El-Nasser

Aydın

et al. 2015

Applied Surface Science

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“…9 On the other hand, it is known that annealing in hydrogen can remove O i and convert V O to H O , 18 thus the lattice spacing decreases after annealed in hydrogen. After the film is annealed at 625 o C, the (0002) lattice spacing is even smaller than the standard value of non-doped ZnO, which should be because the ionic radius of Al 3+ is smaller than Zn 2+ , 26 and meanwhile indicates that the oxygen-related defects have been effectively removed or converted at high temperatures.…”

Section: A Microstructural and Compositional Analysismentioning

confidence: 93%

Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

Yin

Shirolkar

et al. 2016

AIP Advances

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Understanding how the defects interact with each other and affect the properties of ZnO:Al films is very important for improving their performance as a transparent conductive oxide (TCO). In the present work, we studied the effects of hydrogen annealing on the structural, optical and electrical properties of ZnO:Al films prepared by magnetron sputtering. High resolution transmission electron microscopy observations reveal that annealing at ∼300 oC induces the formation of partial dislocations (PD) and stacking faults (SF), which disrupt the lattice periodicity leading to decreased grain size. Annealing at temperatures above ∼500 oC can remove the PD and SF, but large number of zinc vacancies will be generated. Our results show that when films are annealed at ∼500 oC, the oxygen-related defects (interstitials Oi, etc.) in the as-grown films can be remarkably removed or converted, which lead to increments in the carrier concentration, mobility, and the transmittance in the visible range. At annealing temperatures above 550 oC, the hydrogen etching effect becomes predominant, and Al donors are deactivated by zinc vacancies. We also find an abnormal endothermic process by thermal analysis and an abnormal increase in the resistivity during heating the sample under hydrogen atmosphere, based on which the interaction of Oi with the defects (mainly Al donors and PD) is discussed. It is also demonstrated that by annealing the as-grown AZO films at ∼500 oC under hydrogen atmosphere, high performance TCO films with a low resistivity of 4.48 × 10−4 Ωcm and high transmittance of above 90% in the visible light are obtained.

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Effects of Al and Sn dopants on the structural and optical properties of ZnO thin films

Cited by 61 publications

References 43 publications

Structural, Optical and Electrical Properties of Nano-structured Sn-doped ZnO Thin Film via Sol Gel Spin Coating Technique

Structural, Optical and Electrical Properties of Nano-structured Sn-doped ZnO Thin Film via Sol Gel Spin Coating Technique

Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

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