a b s t r a c tThe nanocrystalline ZnO:Fe semiconductor oxides were successfully synthesized via the sol-gel calcination method. Structural, optical and electrical properties of the investigated samples were characterized by various techniques such as atomic force microscopy (AFM), UV-vis absorption and electrical transport measurements. The optical band gap for undoped ZnO (3.19 eV) decreases (2.75 eV) with increasing Fe-doped ZnO (20%). The temperature dependences of the electrical conductivities of undoped ZnO and Fe-doped ZnO were measured and analyzed by Arrhenius equation. The electrical conductivity of the samples decreases with the increase of Fe doping ratio; hence, the electrical conductivity mechanism is controlled by thermally activated processes. To support the nanostructure of Fe-doped ZnO, AFM micrographs were performed.

We report the reduction of surface reflection losses in zinc germanium phosphide (ZnGeP2, or ZGP) crystals by fabricating an antireflection (AR) structure in the substrate itself using subwavelength motheye surface patterns. The motheye AR patterning works by creating a region of gradually varying effective refractive index between air and the ternary nonlinear crystal. Motheye structures were created using interference lithography and reactive-ion etching in a SiCl4 plasma. The ZGP crystal with motheye patterning on the output surface reached a transmittance of ∼67% at a cutoff wavelength of 3.8 μm (close to the theoretical maximum of 73%), with negligible surface contamination from the motheye etching process. The motheye patterning technique could be applied to other nonlinear crystals where surface reflection losses are a concern.

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