Effects of Al film thickness and annealing temperature on the aluminum-induced crystallization of amorphous silicon and carrier mobility

Peng, Cheng; Chung, Chen-Kuei; Lin, Jen Fin

doi:10.1016/j.actamat.2011.06.020

Cited by 22 publications

(5 citation statements)

References 28 publications

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“…The MIC process itself is known to introduce stress in the Si film, and this stress can be either compressive or tensile depending on the process conditions. 33,34 It is worth to note here that we also observe a redshift of the Si Raman peak of the AIC Si on SiO 2 in this study. Therefore, if one considers that the crystal structure of Si is (111)-oriented with tensile strain from the AIC process, it appears that graphene adapts to the tensile strained Si to meet the epitaxial relationship.…”

Section: -3supporting

confidence: 50%

Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

Høiaas

Kim

Weman

2016

Applied Physics Letters

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We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO2 substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.

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Section: -3supporting

confidence: 50%

Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

Høiaas

Kim

Weman

2016

Applied Physics Letters

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“…In this technique, an amorphous Si (a-Si) layer on Al is crystallized by exchanges between the Al and Si layers during annealing (425-500 C). [7][8][9][10][11][12][13] AIC allows for orientation control in large-grained poly-Si layers. [14][15][16][17] Because the AIC-Si layer is doped p-type from residual Al atoms in the Si layer, researchers expect it to be useful as a seed layer for growth of a Si light-absorption layer by epitaxial thickening techniques.…”

Section: Introductionmentioning

confidence: 99%

Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

Toko

Numata

Saitoh³

et al. 2014

Journal of Applied Physics

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By controlling the Si thickness and the annealing temperature used for Al-induced crystallization, we controlled the fraction of (100) and (111) orientations of polycrystalline Si (poly-Si) grains grown on glass. Changing the proportions of crystal orientation strongly influenced the average grain size of the poly-Si layer. By growing a 99% (111)-oriented poly-Si layer, formed with a 50-nm-thick Si layer at 375 C, we produced a Si layer with grains nearly 40 lm in size. We discuss the growth mechanism from the perspective of competition between (100)-and (111)-oriented nuclei. This achievement holds promise for fabricating high-efficiency thin-film solar cells on inexpensive glass substrates. V C 2014 AIP Publishing LLC. [http://dx.

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“…There are certain reports that explain the mechanism of AIC based on different models proposed in the literature [6,9], but a complete understanding of the mechanism has yet to be developed. Several factors, like order of the layer sequences, relative thickness of hydrogenated amorphous silicon (a-Si:H) and Al layers, annealing temperature, and time have been reported to decide the structural and electrical properties of nc-Si films obtained by AIC [10,11]. In our previous work we have shown the growth of nc-Si with almost a complete crystalline fraction for the samples with layer sequence substrate/Si/Al at a low annealing temperature of 300°C [12,13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H

2014

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Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450°C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400°C showed hole concentration of the order of 10 18 cm −3 and the Hall mobility was measured to be 13.5 cm 2 V −1 s −1 . The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.Résumé : Nous utilisons la cristallisation induite par de l'aluminium (AIC) pour fabriquer des films minces de nc-Si de haute qualité, à des températures de recuit allant de 300 à 450°C et qui montrent des propriétés électroniques favorables à leur utilisation dans des senseurs piézorésistifs MEMS. Les films de nc-Si obtenus par AIC à température de recuit de 400°C montrent une concentration de trous de l'ordre de 10 18 cm -3 et nous mesurons leur mobilité de Hall à 13.5 cm 2 V −1 s −1 . La mesure du facteur géométrique (gauge factor) piézorésistif des films donne une valeur de 43 dans le mode longitudinal, dans un cas où le dispositif est soumis à une force constante sur toute la surface de l'échantillon, ce qui représente la plus haute valeur rapporté à date pour un film mince de nc-Si. [Traduit par la Rédaction]

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Effects of Al film thickness and annealing temperature on the aluminum-induced crystallization of amorphous silicon and carrier mobility

Cited by 22 publications

References 28 publications

Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H

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