Effects of Al<sub>2</sub>O<sub>3</sub> Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Ko, Kyul; Ahn, Dae-Hwan; Suh, Hoyoung; Ju, Byeong-Kwon; Han, Jae-Hoon

doi:10.1109/ted.2023.3326428

Cited by 4 publications

(1 citation statement)

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“…Then an L-shaped InGaAs epitaxial region is created using the selective etching process, followed by the deposition and etching of HfO 2 dielectric layer (figures 3(b)-(d)). The ferroelectric layer (HZO) is then deposited adopting atomic layer deposition (ALD) technique (figure 3(e)), which has been realized on InGaAs [40]. HZO can exhibit stable ferroelectricity when the zirconium composition is between 30% and 70% [41], which makes it easier to fabricate and more suitable for CMOS integrated circuits than other ferroelectric materials.…”

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confidence: 99%

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

Liu,

Zhou,

et al. 2024

Phys. Scr.

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In this paper, a symmetric heterogate dopingless electron–hole bilayer tunnel field-effect transistor with a ferroelectric layer and a dielectric barrier layer (FBHD-EHBTFET) is proposed. FBHD-EHBTFET can not only avoid random doping fluctuation and high thermal budget caused by doping, but also solve the issue that conventional EHBTFETs are unable to use the self-alignment process during device manufacturing. The simultaneous introduction of the symmetric heterogate and dielectric barrier layer can significantly suppress off-state current (I off). Ferroelectric material embedded in the gate dielectric layer can enhance electron tunneling, contributing to improving on-state current (I on) and steepening average subthreshold swing (SS avg). By optimizing various parameters related to the gate, ferroelectric layer, and dielectric barrier layer, FBHD-EHBTFET can obtain the I off of 1.11 × 10–18 A μm−1, SS avg of 12.5 mV/dec, and I on of 2.59 × 10–5 A μm−1. Compared with other symmetric dopingless EHBTFETs, FBHD-EHBTFET can maintain high I on while reducing its I off by up to thirteen orders of magnitude and SS avg by at least 51.2%. Moreover, investigation demonstrates that both interface fixed charge and interface trap can increase I off, degrading the off-state performance of device. The study on FBHD-EHBTFET-based dynamic random access memory shows that it has the high read-to-current ratio of 1.1 × 106, high sense margin of 0.42 μA μm−1, and long retention time greater than 100 ms, demonstrating that it has great potential in low-power applications.

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confidence: 99%

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

Liu,

Zhou,

et al. 2024

Phys. Scr.

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The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories

Chen,

Wang,

Liu

et al. 2025

Journal of Alloys and Compounds

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Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Suh,

Jeong,

Kim

et al. 2024

IEEE Electron Device Lett.

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Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Cited by 4 publications

References 56 publications

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories

Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

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Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

Cited by 4 publications

References 56 publications

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories

Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

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Effects of Al₂O₃ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties