Effects of alkali-metals (X = Li, Na, K) doping on the electronic, optoelectronic, thermodynamic, and X-ray spectroscopic properties of X–SnI3 halide perovskites

Charlie, Destiny E.; Louis, Hitler; Ogunwale, Goodness J.; Amodu, Ismail O.; Ashishie, Providence B.; Agwamba, Ernest C.; Adeyinka, Adedapo S.

doi:10.1016/j.cocom.2023.e00798

Cited by 19 publications

(1 citation statement)

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“…where, M = atomic molecular weight, V = Volume. The equation of the energy band gap (E) is given below, which has helped us calculate the results [8]- [11]:…”

Section: Relationship Between Atomic Density Vs Doping Propertymentioning

confidence: 99%

Doping Effects and Relationship between Energy Band Gaps, Impact of Ionization Coefficient and Light Absorption Coefficient in Semiconductors

Pramanik,

Al Rakib,

Siddik

et al. 2024

EJENG

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The doping process is very important in semiconductor technology that is widely used in the production of electronic devices. The effects of doping on the resistivity, mobility and energy band gap of semiconductors are significant and can greatly impact the performance of electronic devices. This thesis aims to investigate the impact of doping on the resistivity, mobility, energy band gap, impact of ionization coefficient, and light absorption coefficient of semiconductors. The study involves an in-depth analysis of the electronic properties of doped semiconductors and their behavior in various conditions. This thesis will provide a comprehensive understanding of the impact of doping on the electronic properties of semiconductors. The energy band gap, impact of ionization coefficient, and Light absorption coefficient were observed in this thesis. In the experimental result, the relation between energy band gap and atomic density, light absorption coefficient and atomic density, impact ionization and atomic density, impact ionization coefficient and Light absorption coefficient, resistivity and mobility has been found.

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“…where, M = atomic molecular weight, V = Volume. The equation of the energy band gap (E) is given below, which has helped us calculate the results [8]- [11]:…”

Section: Relationship Between Atomic Density Vs Doping Propertymentioning

confidence: 99%