Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells

Han, Yazhou; Chen, H.; Yu, Hao; Li, D.S.; Yan, Zixiang; Huang, Qi; Zhou, Jianping

doi:10.1016/s0022-0248(03)01109-6

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…III-nitrides-based optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), are now widely available on the market. Indium gallium nitride (InGaN)-based multi-quantum wells (MQWs) are widely used as the active layer of the LEDs and LDs because their bandgap can be tuned from ultraviolet to infrared emission spectral range (Han et al , 2003; Ji et al , 2011; Kaufmann, Lahourcade, Hourahine, Martin and Grandjean, 2016).…”

Section: Introductionmentioning

confidence: 99%

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Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Sahar

Hassan

et al. 2021

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Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

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Section: Introductionmentioning

confidence: 99%

“…As a result, in the MQWs of NUV-LEDs, there is less radiative recombination (Chang et al , 2003; Kim et al , 2020). The InGaN was found to be susceptible to growth conditions such as growth pressure, growth temperature, Si doping and growth termination (Han et al , 2003).…”

Section: Introductionmentioning

confidence: 99%

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Sahar

Hassan

et al. 2021

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“…Due to the significant difference in the growth temperature, it is believed that the InGaN active layer may be damaged by high-temperature rampup step. Some research groups have reported the thermal stability of InGaN layers by studying the thermal annealing effects on InGaN film [3,4], the effect of interruption time on InGaN/GaN MQWs [5], the effect of NH 3 flow during hightemperature ramp-up step after the growth of InGaN MQWs [6], and the thermal decomposition of InGaN/GaN MQWs [7]. Nonetheless, there have been few systematic reports regarding the effect of thermal damage on the surface morphological, optical, and structural characteristics of the InGaN/InGaN MQWs by high-temperature ramp-up process.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

Lee

Son

Paek

et al. 2005

Journal of Crystal Growth

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“…The formation of trench defects are due to In segregation, as we reported previously. 7) It is suggested that In segregation could be suppressed by higher V/III ratio, [17][18][19][20] so the density of trench defects is suppressed by increasing the V/III ratio from 13 000 to 26 000. The V/III ratio of 26 000 is the upper limit of our MOCVD equipment, so a further increase of V/III ratio cannot be explored.…”

mentioning

confidence: 99%

Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region

Tian

Liu

Zhou

et al. 2019

Appl. Phys. Express

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Increasing trench defect density in green InGaN/GaN multiple quantum wells (MQWs) has been reported to be one cause for “green gap” and creates a challenge in fabricating high-performance green laser diodes (LDs). In this article, we report methods to suppress the density of trench defects. Suppressed defect density in InGaN/GaN MQWs results in greatly improved optical quality, as indicated by increasing photoluminescence (PL) intensity and nonradiative recombination lifetime, and decreasing PL full-width-half-maximums (FWHMs), which can be as narrow as 113 meV. This enabled constant temperature growth of the InGaN/GaN MQW active region of the green LD structure and greatly improved slope efficiency.

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Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells

Cited by 10 publications

References 11 publications

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region

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