Effects of amorphizing species’ ion mass on the end-of-range damage formation in silicon

Clark, Mark H.; Jones, K. S.; Haynes, T. E.; Barbour, Charles J.; Minor, Kenneth G.; Andideh, E.

doi:10.1063/1.1483383

Cited by 15 publications

(8 citation statements)

References 11 publications

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“…After recrystallization, a very low concentration of residual defects is found at the end of range of lithium ion. In contrast to what was observed by Clark et al, 33 who showed that increase of the ion mass decreases the population of interstitial trapped in the EOR, this study shows that for low temperature implantation, low ion mass induces less defects.…”

Section: Discussioncontrasting

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

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The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. V C 2013 American Institute of Physics.

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Section: Discussioncontrasting

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

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“…This result suggests that the dissolution of the EOR damage during the thermal annealing enhances the deactivation. The fact that the deactivation in the Sb-doped samples is independent of laser fluence, either indicates that the deactivation of Sb is not affected by the EOR damage, or that the EOR damage takes on a different morphology in the Sb preamorphized samples due to its greater ion mass than silicon [17]. These results demonstrate the importance of removing all implant damage from the samples in order to maintain full electrical activation of dopants.…”

Section: Resultsmentioning

confidence: 81%

The use of laser annealing to reduce parasitic series resistances in MOS devices

Takamura

Kim

Jain

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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As the size of metal-oxide-semiconductor (MOS) devices continues to be scaled aggressively, new technologies must be developed in order to meet future device requirements. One area that faces serious challenges involves reducing the parasitic series resistances between the channel and the contact. In this work, we demonstrate that laser annealing is a potential alternative annealing technique to form ultra-shallow, low resistivity junctions. This method benefits from the ability to create abrupt, uniform dopant profiles with active concentrations that can exceed the equilibrium solubility limits.We also address some of the issues preventing its adaptation into the semiconductor-processing scheme, including the annealing of patterned structures, dopant deactivation and junction depth control.

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“…These implant conditions have to be properly modeled since ions such as Ge or As are frequently used in the manufacturing of Si devices as preamorphizing steps [49,50], and molecular implants with octadecaborane are considered as an alternative to monatomic B implants because they are self-amorphizing and minimize residual damage [51].…”

Section: Towards a Comprehensive Description Of Ion-implanted Damagementioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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Effects of amorphizing species’ ion mass on the end-of-range damage formation in silicon

Cited by 15 publications

References 11 publications

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

The use of laser annealing to reduce parasitic series resistances in MOS devices

Improved physical models for advanced silicon device processing

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