Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

“…To mitigate the issue of low thermal conductivity of β-Ga 2 O 3 , a few researchers have directly grown β-Ga 2 O 3 on low cost and highly thermally conductive Si substrate and studied the effects of annealing and Si substrate orientations on electrical characteristics of β-Ga 2 O 3 . − Yadav et al observed better Schottky diode performance on polycrystalline pulsed laser deposition (PLD) grown β-Ga 2 O 3 on (100) p-type Si substrate compared to polycrystalline PLD-grown β-Ga 2 O 3 on (111) p-type Si substrate. This was attributed to fewer defects in β-Ga 2 O 3 on the (100) oriented plane and thermionic emission current transport mechanism, while a defect-assisted TFE current transport mechanism was observed in polycrystalline β-Ga 2 O 3 on the (111) plane of the Si substrate .…”