Preliminary study for the effects of temperatures on optoelectrical properties of β-Ga2O3 thin films

Wang, Xia; Liu, Zeng; Zhi, Yusong; Li, Shan; Wu, Zhenping; Li, Peigang; Tang, Weihua

doi:10.1016/j.vacuum.2019.04.059

Cited by 27 publications

(9 citation statements)

References 51 publications

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“…and GaAs [56,57] photodetectors. In particular, given the low thermal conductivity of Ga 2 O 3 , the effects of high temperatures on device operations are the main challenge to overcome [58,59].…”

Section: Resultsmentioning

confidence: 99%

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Liu¹,

Zhang²,

Zhi³

et al. 2021

J. Phys. D: Appl. Phys.

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In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga2O3/lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga2O3-based device, the heterojunction device achieved a lower dark current of 2.7 × 10−11 A, a higher photo- to dark-current ratio of 2 × 103, a higher responsivity of 5.5 mA W−1, a larger specific detectivity of 2.6 × 1011 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μW cm−2. The p-PZT/n-Ga2O3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.

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Section: Resultsmentioning

confidence: 99%

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Liu¹,

Zhang²,

Zhi³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Therefore, the light current first decreases and then increases with the increase of temperature. The light-to-dark current ratio (I 254 nm /I dark ) decreases by increasing temperature, which is due to shorter carrier lifetime and lower electron mobility at higher temperature [30].…”

Section: Resultsmentioning

confidence: 99%

A study for the influences of temperatures on ZnGa₂O₄ films and solar-blind sensing performances

Lu¹,

Zhang²,

Li³

et al. 2021

J. Phys. D: Appl. Phys.

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In this work, ZnGa 2 O 4 metal-semiconductor-metal solar-blind ultraviolet (UV) photodetectors were fabricated and discussed by using the radio-frequency (r.f.) magnetron sputtering method with considerations of the influences of growing and measuring temperatures on photoelectric performances in detail. With the increase of growing temperature, the grain size and optical bandgap of the films increased. Ohmic contacts were formed between the films and Ti/Au electrodes for all the samples, and the photoconductive photodetectors shown decent solar-blind photoelectric performances. At 10 V biasing voltage, the devices had fast response speed and large photo-to-dark current ratio of ∼10 7 at 650 • C. Moreover, we measured the dark current (I dark ) and photocurrent (I photo ) of these devices in the temperature range from 298 K to 598 K. With the increase of temperature, the I dark increased monotonously, while the I photo first decreased and then increased. Furthermore, this study about the effects of temperatures on the ZnGa 2 O 4 films and photodetectors may well provide a meaningful guide for its relevant developments in the future.

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“…The contacting resistance between In electrode and Ga 2 O 3 is relatively high, showing a nonideal ohmic contact. Ga 2 O 3 is a typical n‐type transparent semiconducting oxide (TSO), and its conductivity is relatively low without doping and/or external light source stimulation . The ohmic contact to pure Ga 2 O 3 is not easy to be achieved, whereas a good ohmic contact between In electrode and the sputtered Sr 3 Al 2 O 6 thin film is obtained as indicated in Figure a.…”

Section: Resultsmentioning

confidence: 99%

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

Liu

Wang

Zhi

et al. 2019

Physica Status Solidi (a)

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Oxide semiconductors, including binary and ternary oxides, are promising to be utilized as active layers in electronics. The heterojunctions based on oxides exhibit many attractive physical and structural properties and are preferably used to fabricate devices. Herein, Sr 3 Al 2 O 6 /Ga 2 O 3 heterojunction is fabricated using radiofrequency magnetron sputtering on silicon substrate, which shows an enhanced current-voltage characteristic under the 254 nm ultraviolet light illumination due to the photogenerated carriers in Ga 2 O 3 . In addition, the heterojunction provides evident rectified properties in the dark, and the improved rectified properties can be obtained under the 254 nm UV light illumination due to the electron-hole pairs separation in the depletion region due to the built-in electric field, while the rectified ratio decrease from %700 at AE0.5 to %20 V at AE5 V, which is due to the electron tunneling caused by shrinking depletion layer. Moreover, the band offsets of the heterojunction is determined by the X-ray photoelectron spectroscopy, which suggests a type I alignment with conduction band offset of 0.94 AE 0.02 eV and valence band offset of 0.53 AE 0.02 eV. The interfacial energy band offsets verify the potential implication for their rectifying property.

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Preliminary study for the effects of temperatures on optoelectrical properties of β-Ga2O3 thin films

Cited by 27 publications

References 51 publications

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

A study for the influences of temperatures on ZnGa₂O₄ films and solar-blind sensing performances

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction

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Preliminary study for the effects of temperatures on optoelectrical properties of β-Ga2O3 thin films

Cited by 27 publications

References 51 publications

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga2O3 thin-film heterojunction

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga2O3 thin-film heterojunction

A study for the influences of temperatures on ZnGa2O4 films and solar-blind sensing performances

Rectifying Effect of the Sr3Al2O6/Ga2O3 Heterojunction

Contact Info

Product

Resources

About

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

A study for the influences of temperatures on ZnGa₂O₄ films and solar-blind sensing performances

Rectifying Effect of the Sr₃Al₂O₆/Ga₂O₃ Heterojunction