2021
DOI: 10.1088/1361-6463/abe1ea
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Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga2O3 thin-film heterojunction

Abstract: In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga2O3/lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga2O3-based device, the heterojunction device achieved a lower dark current of 2.7 × 10−11 A, a higher photo- to dark-current ratio of 2 … Show more

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Cited by 11 publications
(6 citation statements)
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“…And the electron affinities of β-Ga 2 O 3 and α-MoO 3 are 4.00 eV and 6.00 eV, respectively [29,30]. According to the electron affinity rule [31][32][33], the conduction band offset (DE c ) and valence band offset (DE v ) are calculated to be 2.00 eV and 0.8 eV, as shown in figure 5(a), indicating a type-II heterojunction. For this heterojunction, a depletion layer will be developed when the β-Ga 2 O 3 and α-MoO 3 contact, leading to a built-in electric field (E built−in ) for separating the photo-generated electron-hole pairs.…”
Section: Resultsmentioning
confidence: 98%
“…And the electron affinities of β-Ga 2 O 3 and α-MoO 3 are 4.00 eV and 6.00 eV, respectively [29,30]. According to the electron affinity rule [31][32][33], the conduction band offset (DE c ) and valence band offset (DE v ) are calculated to be 2.00 eV and 0.8 eV, as shown in figure 5(a), indicating a type-II heterojunction. For this heterojunction, a depletion layer will be developed when the β-Ga 2 O 3 and α-MoO 3 contact, leading to a built-in electric field (E built−in ) for separating the photo-generated electron-hole pairs.…”
Section: Resultsmentioning
confidence: 98%
“…[3][4][5][6][7][8] Among the various wide E g semiconductors, gallium oxide (Ga 2 O 3 ) has the E g of around 4.8 eV, [9,10] exactly translating to the precise deep-ultraviolet (UV) photo detection, [11][12][13][14][15] along with low false alarming rate. As far as it goes, the Ga 2 O 3 -based deep-UV photodetectors are constructed in the forms of metal-semiconductor-metal (MSM) structures, [16][17][18] p-n junctions, [19][20][21] organic-inorganic hybrid heterojunctions, [22][23][24] Schottky photodiodes, [25][26][27][28][29] fieldeffect phototransistors, [30][31][32][33] and nanorod/nanowire array heterojunction, [34] etc. Such devices have shown excellent optoelectronic performances and provided a promised potential for further developing Ga 2 O 3 -based deep-UV photodetectors.…”
Section: Introductionmentioning
confidence: 99%
“…1–9 UV photodetectors can be classified into three main development stages, namely, UV photomultiplier tubes, Si-based UV photodetectors, and third-generation broadband semiconductor materials (such as ZnO-based, GaN-based, and SiC and Ga 2 O 3 -based). 10–16 Although UV photomultiplier tubes have a stable and quick response, allowing for high-response UV detection, the photomultiplier tube requires a large power source and cathode cooling. This makes it bulky and power-hungry as well as unsuitable for practical applications.…”
Section: Introductionmentioning
confidence: 99%