Preparation of all-oxide β-Ga₂O₃/α-MoO₃ heterojunction towards self-driven deep ultraviolet photosensor

Abstract

A self-driven all-oxide β-Ga 2 O 3 /α-MoO 3 heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA W −1 , specific detectivity (D * ) of 10 11 Jones and linear dynamic region (LDR) of 162.9 dB at 10 V, and R of 0.26 mA W −1 , D * of 4 ´10 10 Jones and LDR of 89.44 dB at −10 V. In addition, it could also operate repeatably and stably at zero bias, illustrating that it is a self-driven photodetector. In one word, the fabricated β-Ga 2 O 3 /α-MoO 3 heterojunction has a potential to work as a self-driven solar-blind UV sensing device.

Self-powered Photodetectors based on the Ga2O3/n-GaAs

“…The density of Nt trapping centers at the Ga2O3/GaAs interface was estimated using the volt-farad and volt-siemens characteristics of MIS structures measured by the bridge method with capacitance (C) and conductivity (G) connected in parallel. The obtained values of C and G must be recalculated using formulas (1)(2)(3) in accordance with the equivalent circuit shown in Fig. 7,…”

“…To date, a significant number of studies related to the study of the electrical and photoelectric characteristics of metal-Ga2O3-semiconductor structures have been described. Organic and inorganic materials were used as a semiconductor substrate [2][3][4][5][6][7][8][9]. The electrical and optical characteristics of such devices are determined by the choice of semiconductor, the technology and mode of obtaining the Ga2O3 film, and the technological methods used to process the oxide film after it has been deposited on the semiconductor substrate.…”

Self‐Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D α‐MoO3/Ir/Si Schottky Heterojunction Devices

“…Thin films were prepared by molecular beam epitaxy (MBE) or metal‐organic chemical vapor deposition (MOCVD), which allows the growth of expensive films, only on small substrates, and whose properties are difficult to control. The performances of the devices were dependent on the feed stresses, the best performances were obtained at wavelengths to which Ga 2 O 3 or Bi 2 Se 3 films are sensitive, and the MoO 3 doping was weak (Ga 2 O 3 /deep UV and Bi 2 Se 3 /visible and IR) [3a,11] . Also, there are many other self‐powered PDs such as ZnO, [ 12 ] Au nanoparticles@ZnO, [ 13 ] and ZnO/CuO p–n junction.…”

Фотодиоды на основе структур Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs, способные работать в автономном режиме

“…К настоящему времени описано значительное количество исследований, связанных с изучением электрических и фотоэлектрических характеристик структур металл-Ga 2 O 3 −полупроводник. В качестве полупроводниковой подложки использовали органические и неорганические материалы [2][3][4][5][6][7][8][9]. Электрические и оптические характеристики таких устройств определяются выбором полупроводника, технологией и режимом получения пленки Ga 2 O 3 и технологическими приемами, используемыми для обработки оксидной пленки после ее нанесения на полупроводниковую подложку.…”