Effects of annealing atmosphere on thermoelectric signals from ZnO films

Zhou, Xiaofang; Zhang, H.; Chen, Q.M.; Shang, Jihua; Zhang, P.X.

doi:10.1016/j.tsf.2010.12.011

Cited by 15 publications

(4 citation statements)

References 20 publications

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“…Ultimately, the electrons transfer to the indium electrodes, and the transverse thermoelectric voltage is detected. The peak voltage (V p ) is 0.44 V, which is much stronger than the V p achieved in LSCO (V p is 0.15 V) [ 7 ], LCMO (V p is 0.16 V) [ 10 ], and ZnO (V p is 0.27 V) [ 30 ] thin films. The response time (full width at half maximum) is 1.07 μs.…”

Section: Resultsmentioning

confidence: 99%

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Zou

Liu

et al. 2023

Materials

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Bi2Sr2Co2Oy thin films were grown on 10° vicinal-cut Al2O3 (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase Bi2Sr2Co2Oy thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that Bi2Sr2Co2Oy thin film was obviously c-axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in Bi2Sr2Co2Oy thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 μs when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that Bi2Sr2Co2Oy thin film is also an excellent choice for laser energy/power detectors.

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Section: Resultsmentioning

confidence: 99%

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Zou

Liu

et al. 2023

Materials

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“…The structural anisotropy has also been well identified as stripe order in superconducting La 2– x Ba x CuO 4 and (La 1.6– x Nd 0.4 )Sr x CuO 4 . As an important aspect contributing to high LIVs, the Δ S in highly anisotropic material systems was expected to be quite large but further affected by the doping as Δ S can be evaluated by

Δ S = S_{a b} - S_{c} = \frac{V_{p} κ \sqrt{π τ_{0} τ_{d}}}{α E l \cdot \sin (2 β)}

…”

Section: Resultsmentioning

confidence: 99%

“…The former would result in multiple domain structure that dominates ΔS fluctuations, while the latter would easily cause the loss of high-quality and/or epitaxial feature. As an important aspect contributing to high LIVs, the ΔS in highly anisotropic material systems was expected to be quite large but further affected by the doping as ΔS can be evaluated by [33] This is somewhat similar to the YBCO film case where 2D anisotropy dominates the LIV evolution.…”

Section: Tilting Optimization For Superior High Livsmentioning

confidence: 87%

Enhanced Bidimensionality‐Driven Ultrahigh Laser‐Induced Voltages in High‐T_c Superconducting Epitaxial Films

Xiong

Wang

Zhang

et al. 2018

Adv Elect Materials

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Light/laser‐induced voltage (LIV) phenomenon is discovered for decades, which seems quite promising in light/photovoltage‐related applications, but actually the LIV improvement is quite limited (several volts level) even after long‐term endeavors. To this end, an A‐site doubling tailoring strategy is explored in high‐Tc superconducting perovskite to endow enhanced structural bidimensionality in terms of decoupling between 2D superconducting planes. High‐quality (La1.6–xNd0.4)BaxCuO4 (LNBCO; x = 0.125–0.20) epitaxial films with A‐site Ba/Nd doping are fabricated by pulsed laser deposition method. The LNBCO films exhibit ultrahigh laser‐induced voltages (LIVs), especially the superior LIVs of higher than 50 V for x = 0.15 and 0.175 and show fast rising time (<85 ns) and long response time (>100 ns). Such a high LIV is several orders/folds larger than that of the existing high‐Tc superconductors and other materials reported to date. Systematic influences are investigated in terms of laser irradiation conditions, tilting angle, Seebeck coefficient, etc., suggesting the high LIVs are correlated to charge transport. Simultaneous tailoring over A‐site Ba and Nd in LNBCO causes weaken coupling between the CuO2 planes because the La/Ba/Nd‐O bonds are elongated and charges are localized within Cu or CuO2 plane. This enables accelerating the charge transport anisotropically, a consequence of enhanced bidimensionality.

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“…Laser induced voltage(LIV) effects were became more and more attractive because of their potential applications in the detection of the laser radiations for a wide spectral range [1][2][3][4][5][6][7][8][9][10][11][12][13] . Actually, LIV effects is that when a short laser pulse irradiates the front surface of a thin film, the surface absorbs an amount of heat, and its temperature rise rapidly, then the LIV signal produced because there are temperature difference between the top and the bottom surface of the film.…”

Section: Introductionmentioning

confidence: 99%

Effects of Film Thickness on Laser Induced Voltage (LIV) of La2/3Ca1/3MnO3:Ag0.05 Thin Films Grown on LaAlO3 Substrates

Liu

Yan

Chen

et al. 2013

AMR

Self Cite

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La2/3Ca1/3MnO3:Ag0.05(LCMO:Ag0.05) thin films were prepared on vicinal cut LaAlO3(LAO) substrates with various film thicknesses by pulsed laser deposition technique (PLD). XRD results show that all the samples are shown along the (00l) orientation in orthorhombic structure with Pbnm space group. While the film thickness is around 450nm, the optimum LIV effects of the epilayer thin film have been obtained. The LIV effects enhancement of the LCMO:Ag0.05 thin films due to the photon scattering effects have been restrained and anisotropic seebeck coefficient improved.

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Effects of annealing atmosphere on thermoelectric signals from ZnO films

Cited by 15 publications

References 20 publications

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Enhanced Bidimensionality‐Driven Ultrahigh Laser‐Induced Voltages in High‐T_c Superconducting Epitaxial Films

Effects of Film Thickness on Laser Induced Voltage (LIV) of La<sub>2/3</sub>Ca<sub>1/3</sub>MnO<sub>3</sub>:Ag<sub>0.05</sub> Thin Films Grown on LaAlO<sub>3</sub> Substrates

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Effects of annealing atmosphere on thermoelectric signals from ZnO films

Cited by 15 publications

References 20 publications

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Enhanced Bidimensionality‐Driven Ultrahigh Laser‐Induced Voltages in High‐Tc Superconducting Epitaxial Films

Effects of Film Thickness on Laser Induced Voltage (LIV) of La<sub>2/3</sub>Ca<sub>1/3</sub>MnO<sub>3</sub>:Ag<sub>0.05</sub> Thin Films Grown on LaAlO<sub>3</sub> Substrates

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Enhanced Bidimensionality‐Driven Ultrahigh Laser‐Induced Voltages in High‐T_c Superconducting Epitaxial Films