Effects of annealing conditions and film thickness on electrical and optical properties of epitaxial Al-doped ZnO films

Kuprenaite, Sabina; Abrutis, A.; Kubilius, V.; Murauskas, Tomas; Šaltytė, Z.; Plaušinaitienė, Valentina

doi:10.1016/j.tsf.2015.12.050

Cited by 18 publications

(7 citation statements)

References 32 publications

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“…The poor thermal stability of the resistivity for the pure ZnO-i was improved but also reduced by the optimal extrinsic Al% of 1.5 at.% [33]. However, the NHall and μHall decreased and the ρHall increased with temperatures of up to 300 °C, as shown by Kuprenaite et al [37].…”

Section: Electrical Propertiesmentioning

confidence: 67%

“…The poor thermal stability of the resistivity for the pure ZnO-i was improved but also reduced by the optimal extrinsic Al% of 1.5 at.% [33]. However, the N Hall and µ Hall decreased and the ρ Hall increased with temperatures of up to 300 • C, as shown by Kuprenaite et al [37]. Figure 8a, further altered the mobility of the free carriers, whose modification during the Hall measurements was relative to the mean free path L calculated using the formula [35]:…”

Section: Electrical Propertiesmentioning

confidence: 70%

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Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Hsu

Chen

2018

Coatings

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In this research, zinc oxide (ZnO) films are doped with various amounts of Al dopants, from 0 to 13 at.%, using ion-beam co-sputtering for Zn and Al metallic targets at room temperature. The Al-doped ZnO (AZO) films appear to have lower transmittances in the UV and near-IR ranges. The electrical and optical properties of each film are successfully analyzed by using the spectroscopic ellipsometry of two Lorentz oscillators for the two lower transmittances. The optimal AZO film is deposited with an Al-dopant of 1.5 at.% at an oxygen partial pressure of 0.12 mTorr; it has the smallest resistivity of 7.8 × 10−4 Ω cm and high transmittance of > 80% in the visible regions. The free carrier concentration and mobility evaluated using ellipsometry are different from those measured using the Hall effect. This phenomenon was the result of the grain boundary scattering due to the small ~20-nm grain size of the AZO film used in this study.

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Section: Electrical Propertiesmentioning

confidence: 67%

Section: Electrical Propertiesmentioning

confidence: 70%

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Hsu

Chen

2018

Coatings

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“…Apart from magnetron sputtering belonging to physical vapour deposition methods (PVD), variety of techniques used for ZnO:Al production can be distinguished: sol-gel deposition, spray coating, pulsed laser deposition (PLD) and aerosol-assisted MOCVD technique [9][10][11][12][13][14]. In order to achieve aluminum doped zinc oxide layers with good electrooptical properties on inflexible or flexible substrate [15], RF and DC magnetron deposition or co-sputtering deposition can be used [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Krawczak¹,

Zdyb²,

Gulkowski³

et al. 2017

E3S Web Conf.

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Abstract. Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

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“…A common way to promote exclusively (002) orientation is through epitaxial growth over a substrate like c-silicon and c-Al 2 O 3 , at the expense of reducing the cost-effectiveness of the deposition method. 31 Hence, for any large are application such as low-e coatings, the use of epitaxial growth is not economical and therefore not employed. A wide variety of physical 24,[32][33][34][35] and chemical 15,25,29,[36][37][38][39][40][41][42][43][44] deposition methods have been used to develop ZnO based TCOs, all of which can produce thin lms with visible transmittance over 80% in the visible region.…”

Section: Introductionmentioning

confidence: 99%

Aerosol-assisted route to low-E transparent conductive gallium-doped zinc oxide coatings from pre-organized and halogen-free precursor

et al. 2020

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Effects of annealing conditions and film thickness on electrical and optical properties of epitaxial Al-doped ZnO films

Cited by 18 publications

References 32 publications

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Aerosol-assisted route to low-E transparent conductive gallium-doped zinc oxide coatings from pre-organized and halogen-free precursor

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