Effects of annealing conditions on the properties of TiO2/ITO-based photoanode and the photovoltaic performance of dye-sensitized solar cells

Chen, Chih‐Ming; Hsu, Yu‐Chun; Cherng, Sheng‐Jye

doi:10.1016/j.jallcom.2010.09.118

Cited by 27 publications

(20 citation statements)

References 11 publications

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“…32 So in this work, the effect of annealing on the band alignment of TiO 2 /FTO was also investigated. In our experiment, the as grown TiO 2 sample is amorphous and the annealed TiO 2 sample shows anatase, which are detected by grazing incidence x-ray diffraction.…”

mentioning

confidence: 99%

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

et al. 2016

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The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.

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confidence: 99%

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

et al. 2016

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“…Transparent conducting oxides (TCOs) are special semiconductors that possess three physical properties: high optical transparency, low reflectivity, and high electrical conductivity [1][2][3][4]. They are used as transparent conducting coatings, and have been widely used in a variety of electronic and optoelectronic device applications [5][6][7][8][9][10][11] such as organic light emitting diodes (OLED), liquid crystal displays (LCD), solar cells [12][13][14][15][16][17], and anti-reflection casting.…”

Section: Introductionmentioning

confidence: 99%

“…In this study, SiO 2 and Nb 2 O 5 were selected as suitable buffer layers among the buffer layer materials. SiO 2 was selected due to its low refrac-tive index material (n = 1.4) and its additional advantages in ITO films.…”

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confidence: 99%

Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film

Kwon¹,

Jang²

2015

Transactions on Electrical and Electronic Materials

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This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of SiO 2 and Nb 2 O 5 for touch sensor application. SiO 2 and Nb 2 O 5 buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [Nb 2 O 5 |SiO 2 |ITO] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about 340 Ω/sq. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the Nb 2 O 5 and SiO 2 buffer layers.

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“…The successful combination of the materials involved in cell fabrication, as well as the precise methods used, will determine the final cell performance. In order to further improve the performances of DSSCs, extensive efforts are on-going for each of its constituent components and conditions including dye for sensitizer, electrolyte, paste formulation, catalyst for counter electrode [5], thickness of electrode [6][7][8] and annealing conditions [9][10][11] etc. In this paper our concentration is on catalyst, thickness and annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Several researchers investigated the effect of annealing conditions and concluded that it has an important role in the efficiency of DSSC [21,22]. It is assumed that annealing process will improve electrical properties of this cell due to porosity effect.…”

Section: Introductionmentioning

confidence: 99%

Significant Influence of Annealing Temperature and Thickness of Electrode on Energy Conversion Efficiency of Dye Sensitized Solar Cell: Effect of Catalyst

Uddin

Islam

Khan

et al. 2014

ILCPA

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Dye sensitized solar cell (DSSC) shows great promise as an alternative to conventional p-n junction solar cells due to their low fabrication cost and reasonably high efficiency. DSSC was assembled by using natural dye extracted from red amaranth (Amaranthus Gangeticus) as a sensitizer and different catalysts for counter electrode were applied for maximum energy conversion efficiency. Annealing temperature and thickness of electrode were also investigated and optimized. Catalyst, annealing temperature and thickness were optimized by the determination of cell performance considering photoelectrochemical output and measuring current and voltage; then calculating efficiency and other electrical parameters. The experimental results indicated that samples having 40 µm electrode thickness and prepared at 450 °C annealing temperature showed the best performance.

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Effects of annealing conditions on the properties of TiO2/ITO-based photoanode and the photovoltaic performance of dye-sensitized solar cells

Cited by 27 publications

References 11 publications

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film

Significant Influence of Annealing Temperature and Thickness of Electrode on Energy Conversion Efficiency of Dye Sensitized Solar Cell: Effect of Catalyst

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Effects of annealing conditions on the properties of TiO2/ITO-based photoanode and the photovoltaic performance of dye-sensitized solar cells

Cited by 27 publications

References 11 publications

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Effect of SiO2and Nb2O5Buffer Layer on Optical Characteristics of ITO Thin Film

Significant Influence of Annealing Temperature and Thickness of Electrode on Energy Conversion Efficiency of Dye Sensitized Solar Cell: Effect of Catalyst

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Effect of SiO₂and Nb₂O₅Buffer Layer on Optical Characteristics of ITO Thin Film