Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn)As

Abstract

The effects of low-temperature (210 C-290 C) annealing on the microstructure, lattice constant, and magnetic properties of (In 0 52 Al 0 48 ) 0 91 Mn 0 09 As grown by low-temperature molecular-beam epitaxy were studied. The results show that low-temperature annealing has little influence on the crystalline structure and interface quality of (In 0 52 Al 0 48 ) 0 91 Mn 0 09 As epilayer. In contrast, both the lattice constant and Curie temperature of (In 0 52 Al 0 48 ) 0 91 Mn 0 09 As are found to be strongly dependent on the annealing temperature. The lattice constant linearly decreases with increasing annealing temperature; while the Curie temperature increases with increasing annealing temperature up to 250 C, and then abruptly decreases upon further annealed at 270 C and 290 C.

Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin films

“…These QAMSs also have large MO effects, which can be potentially applied to InP-based MO devices [4,6]. However, the Curie temperatures of QAMSs are much lower than 300 K [4][5][6][7][8][9]. In this paper, we report the fabrication and MO properties of In 0.52 Al 0.48 As:MnAs granular thin films, where MnAs nanoclusters are embedded in an In 0.52 Al 0.48 As matrix.…”

“…On the other hand, we need magnetic granular thin films to be applied to InP-based MO devices at a wavelength of 1.55 mm for optical communication systems. Recently, there are reports on the growth of the III-V-based quaternary alloy magnetic semiconductors (QAMSs), such as [(In 0.53 Ga 0.47 ) 1Àx Mn x ] As and [(In 0.52 Al 0.48 ) 1Àx Mn x ]As, grown on InP substrates [4][5][6][7][8][9]. The lattice constant, band-gap energy, easy magnetization axis, and band structure in the QAMSs can be controlled by changing the In concentration.…”