Effects of annealing on the electrical properties of Fe-doped InP

Zhao, Yanjun; Fung, S.; Beling, C. D.; Sun, Ningning; Sun, Tongnian; Chen, X. D.; Yang, Guangyao

doi:10.1063/1.370835

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…There are only two peaks in the FeP 2 -annealed SI InP wafer. The deep level at 0.63 eV, usually attributed to the iron acceptor as reported in other papers [19,20], shows a high amplitude in the FeP 2 -annealed SI InP sample. In contrast, the low amplitude of this deep level appears in the P-annealed SI InP.…”

Section: Resultssupporting

confidence: 72%

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Dong¹,

Zhao²,

Lu³

et al. 2002

Semicond. Sci. Technol.

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We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP 2 -annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP 2 -annealed SI InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP 2 -annealed SI InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the SI InP suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the SI InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

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Section: Resultssupporting

confidence: 72%

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Dong¹,

Zhao²,

Lu³

et al. 2002

Semicond. Sci. Technol.

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“…Among various SI InP substrates, the iron-doped InP (InP:Fe) single crystal has received extensive attention due to its superior thermal stability 2 . Iron doped InP is a technologically relevant material and has grown by various methods, like as high-temperature ion implantation 3 and liquid encapsulated Czochralski (LEC) 4 . In InP:Fe, the iron atom occupies the indium site substitutionally and primarily adopts the neutral state (labelled 3+ to denote its oxidation state).…”

Section: Introductionmentioning

confidence: 99%

Pressure effect on impurity local vibrational mode and phase transitions in n-type iron-doped indium phosphide

Lin

Hsu

Lin

et al. 2018

Sci Rep

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The evolution of iron local vibrational mode (Fe LVM) and phase transitions in n-type iron-doped indium phosphide (InP:Fe) were investigated at ambient temperature. In-situ angle-dispersive X-ray diffraction measurements revealed that InP:Fe starts to transform from zinc-blende (ZB) to rock-salt (RS) structure around 8.2(2) GPa and completes around 16.0(2) GPa. The Raman shift of both transverse and longitudinal optical modes increases monotonically with increasing pressure, while their intensities become indiscernible at 11.6(2) GPa, suggesting that the pressure-induced phase transition is accompanied by significant metallization. In contrast, originally absent at ambient pressure, the Raman shift of Fe LVM appears at ∼420 cm−1 near 1.2 GPa and exhibits a dome shape behavior with increasing pressure, reaching a maximum value of ∼440 cm−1 around 5 GPa, with an apparent kink occurring around the ZB-RS transition pressure of ∼8.5(2) GPa. The Fe K-edge X-ray absorption near edge structure (XANES) confirmed the tetrahedral site occupation of Fe3+ with a crystal field splitting parameter Δt = 38 kJ·mole−1. Our calculations indicate that the energy parameters governing the phase transition are Δt = 0.49 and Δo = 1.10 kJ·mole−1, respectively, both are much smaller than Δt = 38 kJ·mole−1 at ambient.

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“…Thus the resistivity and Hall mobility are both enhanced by the heat treatment of Fe-doped InP at temperatures between 750 and 1000 • C, for treatment times of several hours. In this way also it is possible to lower the critical threshold concentration of Fe for semi-insulating behaviour [35,36].…”

Section: Semi-insulating Inpmentioning

confidence: 99%

Indium Phosphide Crystal Growth

Grant¹

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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Effects of annealing on the electrical properties of Fe-doped InP

Cited by 8 publications

References 21 publications

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

Pressure effect on impurity local vibrational mode and phase transitions in n-type iron-doped indium phosphide

Indium Phosphide Crystal Growth

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