An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.
In this paper we present the temperature compensation of aluminum nitride (AlN) Lamb wave resonators for a future application to XOs and TCXOs for a frequency ranging from 100 MHz to 1000 MHz. The temperature coefficient of frequency (TCF) for the lowest symmetric Lamb wave mode S 0 for AlN plates with h/λ < 0.3 is found to be around -30 ppm/K. A zero TCF resonator is obtained by adding a compensating silicon dioxide layer. The low dispersion of the phase velocity for the S 0 -mode propagating in thin AlN plates reduces not only the fabrication tolerances towards thickness variations of the AlN layer, but also enables resonators operating over a wide frequency range, i.e. from 100 MHz to 1000 MHz, based on two absolute film thicknesses for AlN and SiO 2 achieving near zero TCF over the entire frequency range. The acoustic properties and different layer configurations of zero TCF Lamb wave devices are discussed in detail.
In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 microm AlN and 0.83 microm SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C(2) at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors.
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