Raman spectroscopy study of ZnSe and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.84</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>0.16</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Se at high pres

Lin, Chih‐Ming; Chuu, Der–San; Yang, Tzong–Jer; Chou, Wu–Ching; Xu, Jian; Huang, Eugene

doi:10.1103/physrevb.55.13641

Cited by 68 publications

(69 citation statements)

References 29 publications

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“…The phonon frequencies were obtained from a fit with a Lorentzian profile, the error bars being the results of the fit. The optical mode frequencies of ZnSe at ambient pressure are w LOÀZnSe ¼ 251:9 and w TOÀZnSe ¼ 204:2 cm À1 for the LO and TO, respectively [14], while for CdSe (zincblende), the frequencies are w LOÀCdSe ¼ 212:6 and w TOÀCdSe ¼ 171:9 cm À1 [2]. The frequencies of the LO and TO modes in the alloy are closer to the frequencies of ZnSe; they do not correspond to an average frequency between the modes of the binary compounds.…”

Section: Methodsmentioning

confidence: 99%

Pressure dependence of optical phonons in ZnCdSe alloys

Camacho

Loa

Cantarero

et al. 2003

Physica Status Solidi (b)

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We report on resonant Raman scattering measurements under hydrostatic pressure and at low temperature on two Zn x Cd 1Àx Se alloy films, which were grown by different epitaxial techniques on GaAs. This ternary alloy exhibits an intermediate (I) mode between the typical transverse (TO) and longitudinal optical (LO) modes of the zinc-blende structure. The shift of the vibrational frequencies of the three modes with pressure is analyzed. The Grçneisen parameters of these three optical modes are determined. Moreover, overtones of the LO modes as well as TO þ nLO and I þ nLO zone-center phonon combinations are observed.

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Section: Methodsmentioning

confidence: 99%

Pressure dependence of optical phonons in ZnCdSe alloys

Camacho

Loa

Cantarero

et al. 2003

Physica Status Solidi (b)

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“…No variation is observed for the pristine material (comparison is valid because the Grüneisen parameters are very close for these two modes 17 . A plot of the intensity of the band assigned to the new phase is shown in Fig.…”

Section: Topological Analyses Of the Phase Transformation And Inducedmentioning

confidence: 95%

“…Decomposition of the spectrum indicates, that a broad band is present at ca 248 cm 1 (full width at half-height D 36.4 cm 1 . ZnSe has been previously studied by Lin et al 17 in the 2-34 GPa range. The 235 cm 1 peak appears at 4.7 GPa and the spectrum at 34 GPa consists of a broad 248 cm 1 peak.…”

Section: Transparent Znse Ceramicmentioning

confidence: 99%

Raman imaging of stress‐induced phase transformation in transparent ZnSe ceramic and sapphire single crystals

Colomban

Havel

2002

J Raman Spectroscopy

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It is known that the polishing of a material can cause pressure-induced phase transformation and modify its surface properties. Indentation was used to apply controlled perturbation on optically clear ZnSe ceramics and on a-alumina single-crystal wafers. New Raman bands are observed at the periphery and/or the centre of the indented area. Confocal Raman and Rayleigh imaging of the peak intensity, bandwidth and wavenumber shift show complex transformations of the indented area. Peak intensity can be used to map the surface geometry with approximately micrometre resolution. For ZnSe, the new bands (ca 235 and 248 cm −1 / are assigned to the phases obtained above 5 and 34 GPa under hydrostatic pressure. Comparison is made with zirconia and corundum crystals. Stress-induced modifications are observed on the a-alumina wafer. They seem to be due to an unknown disordered phase rather than to a high remnant stress. The relationship between the Raman parameters and the applied stress is discussed.

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“…Recent Raman experiments have reported the existence of anomalies below that pressure Lin et al, 1997), but other Raman (Arora et al, 1988;Arora and Sakuntala, 1995) and ADX studies have not been able to locate any apparent structural discontinuity in this region. A continuous though very slow NaCl →Cmcm transition has been observed at 30.0(5) GPa by , who also report the possibility of a further distortion above 48 GPa.…”

Section: Znsementioning

confidence: 99%

High-pressure phases of group-IV, III–V, and II–VI compounds

et al. 2003

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Advances in the accuracy and efficiency of first-principles electronic structure calculations have allowed detailed studies of the energetics of materials under high pressures. At the same time, improvements in the resolution of powder x-ray diffraction experiments and more sophisticated methods of data analysis have revealed the existence of many new and unexpected high-pressure phases. The most complete set of theoretical and experimental data obtained to date is for the group-IVA elements and the group-IIIA-VA and IIB-VIA compounds. Here the authors review the currently known structures and high-pressure behavior of these materials and the theoretical work that has been done on them. The capabilities of modern first-principles methods are illustrated by a full comparison with the experimental data. CONTENTS

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Raman spectroscopy study of ZnSe andZn0.84Fe0.16Se at high pres

Cited by 68 publications

References 29 publications

Pressure dependence of optical phonons in ZnCdSe alloys

Pressure dependence of optical phonons in ZnCdSe alloys

Raman imaging of stress‐induced phase transformation in transparent ZnSe ceramic and sapphire single crystals

High-pressure phases of group-IV, III–V, and II–VI compounds

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