Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering

Kennedy, J.; Murmu, Peter P.; Gupta, Prasanth; Carder, D.A.; Chong, Shen V.; Leveneur, Jérôme; Rubanov, S.

doi:10.1016/j.mssp.2014.05.055

Cited by 74 publications

(15 citation statements)

References 33 publications

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“…ZnS is one of the most prevalent sulfide minerals on Earth, and it used in numerous electronic device applications. It crystallizes in a low temperature cubic zincblende (ZB) phase ( F 4̅3 m ), high temperature hexagonal wurtzite (WZ) phase (e.g., P 6 3 mc , most commonly with a 2H stacking polytype), or a mixture of both, depending on growth conditions. , Both structures have a fairly wide direct band gap of ∼3.7–3.8 eV for ZB and ∼3.9 eV for WZ. , These properties make both structures suitable as buffer layers and, if sufficiently dopable, as transparent electrode layers in solar cells. Importantly, ZnS is an nontoxic, earth-abundant material that is cheap and easily synthesizable in a variety of microstructures.…”

Section: Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…Zinc selenide is n-type semiconducting material (A II -B VI group) with wide band gap (2.7 eV) at room temperature [2]. Zinc selenide is one of the promising materials for the use in optoelectronic devices such as blue laser diodes [3], light-emitting diodes (LEDs) [4], optically controlled switches [5] and tunable mid-IR laser sources for remote-sensing applications [6]. Since the dimension of materials is believed to determine the optical, electronic, thermal and mechanical properties control of the size of the particles is very crucial [7].…”

Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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“…9,[24][25][26][27][28][29][30][31] In addition to these techniques, the preparation of ZnS via solution chemical routes provides a promising option for the large-scale production of this material. Therefore, it is important to develop new environmentally friendly processing material methods with low cost, and with the possibility of formation of nanoscale materials with phase control and well-defined morphologies.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, well-defined ZnS nanoparticles with various morphologies and structures, including nanotubes, nanorods, nanowires, nanocubes, nanospheres, nanoflowers and nanosheets, have been successfully synthesized and studied using a variety of methods. 9,[24][25][26][27][28][29][30][31] In addition to these techniques, the preparation of ZnS via solution chemical routes provides a promising option for the large-scale production of this material. Therefore, it is important to develop new environmentally friendly processing material methods with low cost, and with the possibility of formation of nanoscale materials with phase control and well-defined morphologies.…”

Section: Introductionmentioning

confidence: 99%