Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride

Performance Modulation of Printed Two-Dimensional GaOx Film Transistor Upon Annealing Treatment

“…The figure of merit has a surface character, which is greatly influenced by the surface structure and compositional variations of the material. , The work function of fresh 2D GaO x film is 3.9 eV (in the inset of Figure e), which is slightly smaller than that reported in the literature, possibly due to the different crystallinity and roughness of the film surface. , With the increase of annealing temperature, the work function of 2D GaO x film increases from 3.9 to 4.2 eV. This is due to the Ga atoms being gradually and wholly oxidized and the gradually decreased oxygen vacancies in the film, leading to the decrease of the carrier concentration, the moving of the Fermi energy level to the low-energy direction, and the increase in work function . As shown in Figure f, the VBM value was determined by intercepting the XPS valence band spectra of the 2D GaO x film, and the energy difference between the Fermi energy level, and the VBM of the 2D GaO x film, with the increase of the annealing temperature, decreases from 4.4 to 3.8 eV.…”

“…This is due to the Ga atoms being gradually and wholly oxidized and the gradually decreased oxygen vacancies in the film, leading to the decrease of the carrier concentration, the moving of the Fermi energy level to the low-energy direction, and the increase in work function. 29 As shown in Figure 3f, the VBM value was determined by intercepting the XPS valence band spectra of the 2D GaO x film, and the energy difference between the Fermi energy level, and the VBM of the 2D GaO x film, with the increase of the annealing temperature, decreases from 4.4 to 3.8 eV. The CBM value was obtained by calculating with the formula: E g = E VB − E CB .…”

Confined VLS Growth of Single-Layer 2D Tungsten Nitrides

“…There is a growing interest in two-dimensional metal nitrides from the research community because of the importance of bulk nitrides in the electronic industry: Tungsten nitrides find applications in electronic devices as gate electrodes and diffusion barriers due to their exceptional electrical properties and high chemical stability. Moreover, tungsten nitride alloys are integral components for high-power electronics, lasers, and photonic applications, due to their conducive and adjustable band structure …”